Solid SiC Focusing Ring
Semixlab Technology is a leading Chinese manufacturer of semiconductor silicon carbide ceramic materials. Our Solid SiC focusing rings are specifically engineered for high-intensity plasma environments, playing a critical role in controlling plasma distribution and electric field behavior at wafer edges. This helps minimize edge effects and enhance process consistency from the wafer center to the periphery. This product is commonly applied in plasma etching applications such as ICP and CCP etching, as well as in PECVD and ALD deposition processes, where it plays an irreplaceable and critical role. We look forward to your inquiry.
Description
The Solid SiC Focusing Ring is a critical plasma contact component engineered for advanced semiconductor manufacturing processes. In these processes, precise control of plasma distribution, process uniformity, and chamber stability is paramount. Within modern dry etch and deposition equipment, the performance of wafer edge control components has a direct and measurable impact on process repeatability, yield, and equipment uptime. Semixlab's Solid SiC Focusing Ring combines the purity, structural integrity, and long-term plasma corrosion resistance of SiC material to meet these stringent requirements.
In Inductively Coupled Plasma (ICP) and Capacitively Coupled Plasma (CCP) etching processes, the focusing ring is positioned around the wafer edge to define and stabilize the plasma boundary. Its primary function is to regulate the local electric field and plasma density near the wafer edge, thereby mitigating edge effects that could cause etch rate non-uniformity, profile distortion, or critical dimension variation. By maintaining consistent plasma interaction with the wafer surface, the solid silicon carbide focusing ring enhances center-to-edge uniformity.

Solid sic etching focusing ring working diagram
In PECVD and ALD deposition processes, uniform film thickness and composition consistency are critical. Solid SiC Focusing Rings play an equally vital role in shaping the reaction environment at the wafer edge. They help control the distribution of reactive species and plasma energy, reduce edge overdeposition, and minimize film inhomogeneities caused by uncontrolled plasma expansion.
Compared to traditional solutions using quartz, alumina, or graphite substrates, Solid SiC Ceramics offer distinct advantages. Solid silicon carbide exhibits exceptional corrosion resistance against fluorine- and chlorine-based plasma chemicals, outstanding thermal stability during sustained high-power operation, and a dense microstructure that significantly reduces particle generation. These properties enable the focusing ring to maintain stable electrical and mechanical performance over extended lifecycles, thereby reducing chamber contamination risks and minimizing process drift associated with component wear.
Leveraging Semixlab's deep expertise and leading-edge technology in advanced ceramic processing, our Solid SiC focusing rings deliver consistent performance in the most demanding plasma environments. By extending component lifespan, reducing maintenance frequency, and maintaining stable plasma conditions, semiconductor manufacturers achieve higher yields, increased equipment utilization, and lower production costs. Contact us for advanced technical consultation and product solutions tailored to your semiconductor etching processes and PECVD/ALD deposition processes.
Specifications
| Physical properties of Solid SiC | |||
| Density | 3.21 | g/cm3 | |
| Electricity Resistivity | 102 | Ω/cm | |
| Flexural Strength | 590 | MPa | (6000kgf/cm2) |
| Young's Modulus | 450 | GPa | (6000kgf/mm2) |
| Vickers Hardness | 26 | GPa | (2650kgf/mm2) |
| C.T.E.(RT-1000℃) | 4.0 | x10-6/K | |
| Thermal Conductivity(RT) | 250 | W/mK | |
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