Solid SiC edge ring

Key Performance Features

Semixlab Bulk SiC Edge Ring is engineered to meet the rigorous demands of next-generation semiconductor production. The following performance attributes make it a preferred choice for plasma etch chambers in advanced fabs:

● Excellent Plasma Bombardment Resistance

Fabricated from high-purity solid silicon carbide, the edge ring exhibits exceptional resilience to high-density plasma, ensuring minimal wear and extended component life under intense ion bombardment.

● Superior Gas Corrosion Resistance

SiC material offers high chemical inertness, effectively withstanding corrosive etch gases such as Cl₂, CF₄, and SF₆ without surface degradation, even in high-temperature environments.

● Outstanding Thermal Shock and Thermal Strain Resistance

With a thermal conductivity of 120-150 W/m·K and a low thermal expansion coefficient (~4.5×10⁻⁶ /K), the solid SiC structure maintains dimensional stability and mechanical integrity during rapid thermal cycling.

● Smooth Surface, Particle-Free Operation

Advanced surface finishing techniques ensure a low surface roughness (Ra ≤ 0.2 µm), minimizing particle generation and simplifying chamber cleaning processes, which reduces downtime.

● No Warping or Deformation Over Time

Unlike conventional composite edge rings, our monolithic SiC design remains flat and dimensionally stable throughout extended process cycles, delivering reliable performance over long service lifespans.

Why Choose Semixlab SiC Edge Rings?

At Semixlab, we deliver superior quality backed by expertise and innovation. Here's why Semixlab SiC Edge Rings stand out:

● Custom-Tailored Solutions

We provide full customization based on your process specifications, including inner/outer diameters, thickness, and special surface coatings or textures, ensuring perfect fit and optimal performance in your etch chamber.

● Comprehensive Range of Types

Semixlab supports various etch tool platforms including TEL, Lam, AMAT, and custom OEM systems, with both standard and tool-specific edge rings available to suit diverse process needs.

● Stable Quality, Fast Delivery

With ISO-certified manufacturing, strict quality control, and a streamlined supply chain, we ensure consistent part performance, short lead times, and on-time delivery to keep your production moving without delays.

Core Physical properties of Solid SiC

Application in Semiconductor Manufacturing

The Solid SiC Edge Ring is an essential component in the silicon wafer plasma etching process, where it serves as a protective and structural interface between the wafer and the chamber hardware. Positioned around the edge of the wafer, this component ensures process stability, protects the electrostatic chuck (ESC), and reduces contamination risks by preventing particle accumulation. It is particularly valuable in high-precision dry etching and RIE (Reactive Ion Etching) environments where process repeatability, chamber protection, and long-term reliability are critical.