Solid SiC Carrier

Semixlab's Solid SiC Carrier uses high-purity single crystal SiC as the substrate, and forms a nano-scale SiC-C composite protective layer on the surface through a patented coating process, which reconstructs the performance boundary of the carrier material at the molecular level. Its excellent performance stems from SiC's unique crystal structure and covalent bond characteristics.

Material properties

● Extremely high thermal stability and temperature resistance: SiC exhibits excellent stability at high temperatures and can work stably in an oxidizing environment up to 1600°C, and its sublimation temperature can even reach about 2700°C. This makes SiC carriers an ideal choice for high-temperature epitaxial growth, annealing and other processes, far exceeding the tolerance of traditional materials.

● Excellent thermal conductivity: The thermal conductivity of SiC at room temperature is as high as 120 W/m·K, which is 3 times that of silicon (Si). High thermal conductivity ensures that the wafer on the carrier can obtain uniform temperature distribution in high-temperature processes, thereby ensuring the uniformity of the epitaxial layer growth quality and reducing warping and stress.

● Excellent mechanical strength and hardness: SiC has extremely high hardness (Mohs hardness 9.0-9.5, Vickers hardness 32 GPa), second only to diamond, as well as high Young's modulus (440 GPa) and high bending strength (490 MPa). This makes the SiC carrier extremely resistant to wear and deformation during mechanical impact and high-intensity handling, effectively extending its service life.

Why choose Semixlab's Solid SiC Carrier?

● R&D and production capabilities: Semixlab has 2 R&D centers, 2 production bases, 12 production lines, more than 150 employees, and R&D investment accounts for more than 30%. It has the ability to produce tens of thousands of SiC products annually.

● Technical advantages: Independently develop CVD equipment and formulas, support high-purity CVDSiC, TaC and other coatings and solid SiC materials, CNC precision control can reach 3μm, ash content is less than 5ppm, and product performance is industry-leading.

● Complete supply system: Semixlab has an independent silicon carbide material synthesis line and precision CNC processing platform, which can provide Ø4" ~ Ø12" and customized sizes, support fast delivery, and adapt to mainstream equipment brands such as Veeco, AIXTRON, and Applied Materials.

● Customization and one-stop service: According to customer needs, we can provide full-process services from material selection, R&D, pilot to mass production to meet various high-end semiconductor manufacturing needs.

● International market and customer base: Semixlab has established long-term cooperation with more than 30 wafer manufacturing and compound semiconductor customers at home and abroad, including Mini LED, SiC power device, MEMS, and RF device manufacturers.

Solid SiC carrier has become a key consumable in the fields of semiconductor epitaxy, packaging, power devices, etc. with its excellent material properties and process performance. Semixlab is a trustworthy partner that provides high-quality and efficient SiC carrier solutions to global customers with its strong R&D, manufacturing and customization capabilities.

Specific uses in semiconductor manufacturing

The excellent performance of Solid SiC Carrier makes it play an indispensable role in a variety of key semiconductor manufacturing processes, especially suitable for links with extremely high requirements for temperature, purity, uniformity and mechanical stability. Common application scenarios are as follows:

1. Epitaxy

MOCVD epitaxy: SiC carrier is the core component of the growth of GaN, GaAs, SiC and other compound semiconductor films in MOCVD equipment, such as barrel susceptor and pancake susceptor carriers. Its high thermal conductivity ensures the temperature uniformity in the reaction chamber, which is crucial to the uniformity of film thickness, composition and doping; its high purity and chemical inertness effectively avoid impurity contamination and ensure the electrical and optical properties of the epitaxial layer, especially in the manufacture of LEDs, power electronics and radio frequency devices.

SiC epitaxy: In SiC power device manufacturing, SiC carriers are ideal platforms for epitaxial growth of SiC wafers. The thermal expansion coefficient that perfectly matches that of SiC wafers effectively reduces the stress caused by temperature changes during the epitaxy process, thereby reducing the defect rate and improving the quality of the epitaxial layer.

Silicon-based epitaxy: In advanced silicon processes, SiC carriers can also be used in certain silicon epitaxy processes that require higher temperature uniformity and cleanliness requirements.

2. Annealing

High-temperature activation annealing: After ion implantation, SiC carriers are used in high-temperature annealing processes for silicon or SiC wafers to activate the implanted dopants and repair lattice damage. The high-temperature stability and uniform heating capability of SiC carriers ensure the efficiency of the annealing process and the integrity of the wafer.

RTP (rapid thermal annealing) carriers: In rapid thermal annealing equipment, SiC carriers can withstand the harsh thermal cycles of rapid heating and cooling and maintain structural stability, which is suitable for advanced processes such as flash annealing.

3. Ion Implantation

Doping and repair carriers: SiC carriers are used to fix wafers during ion implantation. Their high mechanical strength and wear resistance ensure stability under ion beam bombardment. At the same time, their low particle generation characteristics also reduce contamination during the implantation process.

4. Other applications

Etching process: In some ICP (inductively coupled plasma) etching or PSS (patterned sapphire substrate) etching processes, SiC carriers are used as wafer fixing fixtures or substrates due to their resistance to plasma corrosion and low particle characteristics.

High-purity furnace tubes/boats: In some high-purity diffusion or oxidation furnaces, SiC materials are also made into furnace tubes or wafer boats to provide an extremely clean process environment.