Silicon Carbide Sic Porous Ceramic Disc

Name: Silicon Carbide Sic Porous Ceramic Disc
Brand: Semixlab
Price: 60.0 USD
Availability: InStock
Rating: 5 (18 reviews)

The Silicon Carbide (SiC) Porous Ceramic Disc from Semixlab is designed for high-performance semiconductor wafer processing applications that demand precision, purity, and durability. With controlled micro-porosity, superior thermal conductivity, and chemical inertness, this component plays a crucial role in vacuum chucking, CMP (Chemical Mechanical Polishing), epitaxy, and wafer handling systems.

INQUIRY

Description

Ideal for: CMP platforms, MOCVD epitaxy reactors, wafer transfer modules, plasma cleaning systems, and ESC substrate assemblies.

Ⅰ. Material Composition and Physical Characteristics

High-Purity SiC Ceramic Structure

Crafted from ≥99.9% ultra-pure α-SiC or β-SiC powders, each porous disc is manufactured through precision-controlled sintering and infiltration processes. The result is a uniform pore network that ensures stable gas flow and mechanical integrity under extreme processing environments.

Key Technical Properties:

Property	Specification
Material	α-SiC / β-SiC
Purity	≥99.9%
Porosity	10–40% (adjustable)
Pore Size	0.1–10 μm
Thermal Conductivity	120–200 W/m·K
Max Operating Temp	1600–1800°C
Hardness	Mohs 9.3
Chemical Resistance	Excellent in HF, HCl, Cl₂, H₂
Density	2.8–3.1 g/cm³

Performance Highlights:

● Uniform Vacuum Permeability: Precise pore distribution ensures balanced gas flow across the wafer surface.

● Excellent Thermal Stability: Maintains mechanical integrity under high-temperature cycling.

● Low Particle Generation: Polished SiC surfaces minimize contamination risk.

● Superior Durability: Extended service life even in aggressive chemical and plasma environments.

Ⅱ. Common Process Challenges and Semixlab Solutions

Challenge	Root Cause	Semixlab Solutions
Uneven Vacuum Suction	Non-uniform pore size or clogging	Controlled pore size distribution and periodic plasma cleaning
Particle Contamination	Micro-cracks from thermal cycling	Apply CVD SiC coating for surface strengthening
Thermal Non-Uniformity	Uneven density or contamination	Use high-conductivity SiC (>150 W/m`K) and polished surfaces
Chemical Erosion	Prolonged exposure to HF or Cl-based gases	Adopt dense CVD SiC hybrid sintering to enhance corrosion resistance
Reduced Mechanical Strength Over Time	Repeated wafer loading stress	Secondary infiltration to improve fracture toughness and extend service life

Semixlab’s proprietary material control and surface engineering ensure consistent performance, long-term reliability, and reduced equipment downtime across multiple process cycles. Welcome to consult us for further technical consultation and product customization services.

Applications

Applications in Semiconductor Processes

1. Wafer Vacuum Chucking and Handling

Porous SiC discs are widely used as vacuum chuck plates or carrier supports in wafer loading and transfer systems. Their precisely engineered porosity ensures uniform vacuum suction, eliminating wafer deformation and improving alignment accuracy.

2. Chemical Mechanical Polishing (CMP)

During CMP, the porous SiC disc serves as a carrier or backing plate, enabling:

● Even slurry distribution

● Stable wafer support

● Improved planarity and defect control

Compared to conventional alumina or quartz, SiC offers higher hardness and thermal conductivity, ensuring a longer lifespan and improved process consistency.

3. Epitaxy and High-Temperature Processing

In MOCVD and LPE epitaxial reactors, the SiC porous disc functions as a thermal susceptor base or support platform, ensuring:

● Uniform heat transfer across the wafer

● Stable epitaxial layer thickness

● High resistance to reactive process gases

4. Wet & Plasma Cleaning Systems

Thanks to its chemical and plasma corrosion resistance, the porous SiC disc performs effectively as a gas diffusion plate or chemical filtration substrate in wet benches and cleaning chambers.

5. ESC (Electrostatic Chuck) Base Layer

In advanced wafer stages, porous SiC ceramics act as thermal bases for ESCs, combining excellent heat transfer and electrical insulation for precise wafer temperature control.