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Silicon Carbide Ceramic Wafer Boat
| Place of Origin: | China |
| Brand Name: | Semixlab |
| Model Number: | TC-SIC-WB-2501 |
| Certification: | ISO 9001 |
| Minimum Order Quantity: | 1 Unit |
| Price: | Contact for Customized Quotation |
| Packaging Details: | Anti-Static Foam + Wooden Crates (Customizable) |
| Delivery Time: | Delivery Time: 30-45 Days After Order Confirmation |
| Payment Terms: | T/T |
| Supply Ability: | 100 Units/Month |
Description
Silicon Carbide Ceramic Wafer Boat is a high performance carrying tool designed for semiconductor manufacturing and photovoltaic energy process. It is made of high-purity silicon carbide (SiC) ceramic material, which is made by advanced pressless sintering process. It has excellent high temperature resistance, chemical stability and mechanical strength, and becomes the core consumables in wafer transmission, high temperature annealing and other precision processes.
1. Stability in extreme environments
The molecular structure of sic ceramics gives it ultra-high thermal stability, which can maintain its structural integrity in a continuous high temperature environment of 1650°C. Compared with conventional quartz or alumina materials, the thermal expansion coefficient of sic boats is very low (only 4.5×10-6/°C), effectively avoiding deformation or cracking caused by sudden temperature changes. In semiconductor manufacturing, this property can significantly reduce the displacement deviation of the wafer in the high temperature process and improve the yield.
2. Unparalleled corrosion resistance
Silicon carbide ceramics show strong resistance to strong acids (such as hydrofluoric acid, sulfuric acid), strong bases and oxidizing gases (Cl₂, O₂). Even in sulfur or halogen atmosphere at 1400°C, the surface remains smooth and corrosion-free, ensuring that no contamination remains on the wafer surface.
3. Long service life and economic benefits
Through the unique surface densification treatment process, the wear resistance of the silicon carbide boat is more than 15 times higher than that of traditional materials. The actual test shows that after 1000 cycles in 1400°C oxidation atmosphere, the surface roughness is still lower than 0.2μm of Ra, and the turnover times can reach 5-8 times of that of ordinary ceramic boats, which greatly reduces the frequency of equipment shutdown and replacement, and the comprehensive cost saving is over 30%.
Quick Detail:
1. Other names: silicon carbide crystal boat, semiconductor ceramic carrier.
2. Application: Used in high temperature diffusion, oxidation and annealing process in semiconductor manufacturing to carry silicon wafer and ensure uniform heat distribution.
3. Core parameters: purity ≥99.99%, maximum temperature resistance of 1500℃, low thermal expansion coefficient (4.5×10-6/℃), strong thermal shock resistance.
Specifications
| Physical properties of Sintered Silicon Carbide | |
| Property | Typical Value |
| Chemical Composition | SiC>98% |
| Bulk Density | >3.07 g/cm³ |
| Apparent porosityApparent porosity | <0.1% |
| Modulus of rupture at 20℃ | 270 MPa |
| Modulus of rupture at 1200℃ | 290 MPa |
| Hardness at 20℃ | 2400 Kg/mm² |
| Fracture toughness at 20% | 3.3 MPa · m1/2 |
| Thermal Conductivity at 1200℃ | 45 w/m·K |
| Thermal expansion at 20-1200℃ | 4.5×10-6/℃ |
| Max.working temperature | 1400℃ |
| Thermal shock resistance at 1200℃ | Good |
| Physical properties of Recrystallized Silicon Carbide | |
| Property | Typical Value |
| Working temperature (°C) | 1600°C (with oxygen), 1700°C (reducing environment) |
| SiC content | > 99.96% |
| Free Si content | < 0.1% |
| Bulk density | 2.60-2.70 g/cm3 |
| Apparent porosity | < 16% |
| Compression strength | > 600 MPa |
| Cold bending strength | 80-90 MPa (20°C) |
| Hot bending strength | 90-100 MPa (1400°C) |
| Thermal expansion @1500°C | 4.7x10-6/°C |
| Thermal conductivity @1200°C | 23 W/m·K |
| Elastic modulus | 240 GPa |
| Thermal shock resistance | Extremely good |
Applications
High temperature heat treatment of semiconductor wafers (oxidation, annealing, doping).
Photovoltaic industry wafer coating and sintering.
Competitive Advantage
Ultra-high temperature stability: long-term resistance to 1500°C high temperature, no deformation or performance attenuation.
Low pollution design: high purity material + non-adhesive process, avoid metal ion pollution.
Long life: excellent thermal shock resistance, longer service life than quartz carrier 3-5 times.
Flexible customization: support size, slot spacing, depth customization of surface treatment.
