SiC Edge Ring for Wafer Processing

Modern SiC Edge Ring Fabrication Process

The fabrication of SiC edge rings is a complex and precise process. First, SiC raw material powder is rigorously purified to obtain high purity (>99.999%). This powder is then formed using isostatic or dry pressing. Next, it is sintered at temperatures between 2100°C and 2400°C to form a dense ceramic body. Subsequently, it is precision-finished using diamond grinding and polishing techniques to achieve extremely low surface roughness (Ra < 0.1 µm). Finally, it undergoes rigorous cleaning and particle inspection to ensure it meets the cleanliness standards of semiconductor manufacturing.

Core Uses of the SiC Edge Ring

The SiC Edge Ring plays a vital role in critical wafer fabrication steps such as etching and deposition. Its primary function is to protect the wafer's edge, ensure process uniformity across the entire wafer surface, and extend the lifespan of internal chamber components.

Here are the key applications:

Wafer Edge Protection: During plasma etching, unprotected wafer edges can experience a different etch rate than the central area. This leads to out-of-spec parameters for chips at the wafer edge (edge die), significantly lowering the overall yield. The SiC Edge Ring acts as a physical barrier, effectively suppressing the edge plasma effect to ensure uniform processing from the center to the edge of the wafer.

Plasma Distribution Control: In plasma-based processes, the density and distribution of the plasma directly impact the final outcome. The presence of the SiC Edge Ring modifies the boundary conditions of the plasma inside the reaction chamber, leading to a more uniform plasma distribution across the wafer surface. This is critical for processes that demand extremely high uniformity, such as deep trench etching or multi-layer dielectric etching.

Contamination Prevention & Part Longevity: Byproducts and deposits can form at the wafer's edge during certain processes. If left uncontrolled, these materials can contaminate the chamber walls, the electrostatic chuck, and other expensive components. The SiC Edge Ring effectively captures and prevents these contaminants from spreading, protecting valuable chamber parts and reducing the frequency of chamber cleans. This, in turn, boosts the equipment's uptime.

As an ideal consumable for plasma etching and thin-film deposition equipment, our SiC Edge Ring helps to eliminate wafer edge effects, ensuring uniform etching and deposition from the center to the edge. And Protect expensive internal chamber components, reducing deposition buildup and extending equipment uptime. Meanwhile, Efficiently dissipate heat, maintaining wafer temperature consistency during high-power processes.

Choosing Semixlab SiC Edge Ring means choosing higher chip yield, more stable manufacturing processes, and lower equipment maintenance costs. We sincerely look forward to providing you with customized products and technical support. We welcome your further inquiries.