SiC Ceramic Robotic Arm

Key Applications

The SiC Ceramic Robotic Arm from Semixlab Semiconductor is designed to deliver unmatched reliability and cleanliness across multiple stages of semiconductor wafer processing. Its application spans from front-end to back-end processes, where precision, contamination control, and material integrity are mission-critical.

In wafer handling and transfer systems, the SiC robotic arm ensures stable and particle-free movement of wafers between vacuum chambers, load ports, and FOUPs. The ultra-smooth, mirror-polished surface prevents micro-scratches and eliminates particulate contamination during high-speed robotic motion. Its dimensional stability under vacuum and thermal stress allows it to maintain sub-millimeter positioning accuracy, which is essential for automated wafer alignment and advanced lithography preparation.

During CVD and PECVD processes, the arm demonstrates exceptional resistance to plasma environments and reactive gases such as Cl₂ and HF, allowing direct use in deposition systems handling silicon, SiC, or GaN wafers. Even under prolonged exposure to temperatures above 1000°C, the SiC ceramic structure maintains its mechanical strength and geometry, providing reliable wafer transfer into and out of high-temperature process chambers with minimal maintenance downtime.

In etching and ion implantation modules, the SiC arm operates flawlessly in aggressive halogen plasma atmospheres where metallic or polymer-based components would typically degrade. Its chemical inertness prevents corrosion and particle shedding, ensuring long-term stability and improved tool uptime. Similarly, during oxidation, annealing, and diffusion processes, the arm’s low thermal expansion coefficient prevents deformation and preserves wafer alignment accuracy despite extreme temperature cycling.

The SiC ceramic robotic arm is also widely adopted in CMP, cleaning, and post-process applications, where both chemical compatibility and ultra-clean surface properties are crucial. It resists acidic and alkaline cleaning agents, prevents ionic leaching, and eliminates metallic contamination—contributing to improved wafer surface quality and reduced defectivity.

Finally, in SiC and GaN power semiconductor manufacturing, this robotic arm becomes a critical enabler for next-generation wide bandgap devices. Its material compatibility with SiC epitaxial wafers and high-temperature reactors minimizes cross-contamination, enhances process consistency, and supports the industry’s transition to high-performance, energy-efficient devices. Whether in vacuum transfer, epitaxy, or high-temperature anneal systems, the Semixlab SiC Ceramic Robotic Arm ensures precision, purity, and longevity under the most demanding semiconductor process conditions.

Applications Across Semiconductor Lines

● 200mm / 300mm wafer processing platforms

● SiC / GaN power device fabrication

● High-temperature vacuum transfer systems

● LPCVD, PECVD, Epi, and RTP equipment

Core Material Advantage

Built from high-density sintered SiC ceramics, the robotic arm provides:

● Thermal stability up to 1200°C for furnace and epitaxial processes.

● Superior chemical resistance to HF, Cl₂, O₃, and other aggressive gases.

● Ultra-clean operation with minimal particle generation, ideal for Class 1 environments.

● Low thermal expansion ensuring sub-millimeter alignment accuracy.

● Optional conductive SiC coating for ESD protection and electrostatic discharge control.