SiC Ceramic Crucible
The SiC Ceramic Crucible from Semixlab Semiconductor is a high-performance component designed for high-temperature and ultra-clean semiconductor processing environments. Manufactured using high-purity sintered or CVD silicon carbide (SiC), this crucible combines excellent thermal conductivity, superior mechanical strength, and outstanding chemical stability. Looking forward to your inquiry.
Description
The SiC Ceramic Crucible serves as a critical containment and reaction vessel in processes such as SiC and GaN crystal growth, epitaxial deposition, diffusion, and high-temperature annealing—where purity, stability, and temperature uniformity directly determine wafer yield and crystal quality.
Material Characteristics
● Material Composition: Ultra-pure sintered SiC or CVD-SiC (≥99.9%)
● Density & Microstructure: Fully dense, fine-grained, and non-porous structure for superior gas impermeability
● Thermal Stability: Excellent performance up to 2000°C in inert or reactive gas atmospheres
● Thermal Conductivity: 120–200 W/m·K, ensuring superior temperature uniformity
● Corrosion Resistance: Outstanding stability in hydrogen, chlorine, and halogen-based process gases
● Surface Finish: Mirror-polished and plasma-cleaned to minimize particle generation
Applications
Key Applications in Semiconductor Manufacturing
The SiC Ceramic Crucible plays a vital role in several semiconductor manufacturing stages, including:
1. Crystal Growth and Epitaxy
Used in PVT (Physical Vapor Transport) and CVD epitaxial growth systems, SiC crucibles provide a stable, non-reactive container for source materials and growing crystals.
Their high purity and matching thermal expansion coefficient minimize contamination and stress, ensuring defect-free crystal formation for SiC, GaN, and Ga₂O₃ substrates.
2. High-Temperature Diffusion and Annealing
In thermal treatment, diffusion, and oxidation processes, SiC crucibles maintain their shape and chemical integrity under extreme thermal cycling, preventing outgassing and particle release that can compromise wafer quality.
3. Material Sintering and Powder Processing
SiC crucibles are also ideal for semiconductor-grade powder sintering, offering high-temperature chemical inertness and dimensional stability under vacuum or controlled atmosphere conditions.
Competitive Advantage
Semixlab’s Advantages
At Semixlab Semiconductor, we provide more than just components — we deliver comprehensive engineering solutions to meet the stringent demands of semiconductor manufacturing.
1. Customized Design
● Tailored crucible geometry, thickness, and gas inlet configuration.
● Compatible with major crystal growth and CVD systems (LPE, PVT, AIXTRON, Veeco, etc.).
2. Technical Consultation
● In-house materials scientists and process engineers with over 20 years of industry experience.
● Support for thermal design, gas flow simulation, and process matching.
3. Pre-Delivery Quality Assurance
● Each crucible undergoes dimensional precision inspection, helium leak testing, and surface roughness analysis.
● Optional CVD protective coating and mirror-polishing services for enhanced lifespan and cleanliness.
The Semixlab SiC Ceramic Crucible sets a new benchmark for thermal stability, purity, and chemical durability in advanced semiconductor processing. With customized design options, technical consultation, and stringent pre-shipment inspection, Semixlab ensures every product meets the demanding requirements of high-temperature, high-purity semiconductor applications. We look forward to your further inquiries.
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