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SiC Ceramics
PZT Piezoelectric Wafers
PZT Piezoelectric Wafers

PZT Piezoelectric Wafers


With the explosive growth of 5G communications, precision medicine, and smart wearable devices, market demand for high-sensitivity, low-power MEMS transducers is on the rise. Our piezoelectric wafers (PZT on Si/SOI) utilize advanced thin-film deposition processes to achieve exceptional uniformity and superior piezoelectric properties on silicon substrates, serving as the fundamental core for efficient electro-mechanical energy conversion.

Description

PZT Piezoelectric Ceramic Wafers Physical Structure

Custom Services

In addition to offering standardized 8-inch PZT wafers, we provide extensive customization capabilities tailored to our clients' specific requirements:

● Substrate Diversity: We support deposition on both Si wafers and SOI wafers (with resistivity > 5000 ohm/cm).

● Thin Film Customization: Specific thin film types and thicknesses can be adjusted to meet design specifications.

● Flexible Sizing: We offer processing capabilities for both 6-inch and 8-inch wafer formats.

● Customer-Supplied Wafers: We accept customer-provided substrates for piezoelectric thin film growth.

Your Technical Partner: We are committed to providing comprehensive support—from material growth to structural customization. Whether you are in the laboratory R&D phase or at the mass production stage, our technical team is ready to provide the piezoelectric solutions best suited to your needs.

Specifications

Our standard products are manufactured using 6-inch and 8-inch processes, featuring sophisticated multi-layer structural designs that ensure stable performance throughout complex MEMS fabrication workflows.

Layer Structure Parameters (Standard 8-inch)

PZT Ceramic Wafer Structure

LayerThicknessNote
Top ElectrodecustomizedUpper Electrode
Piezo LayercustomizedCore Piezoelectric Layer
Buffer LayercustomizedGrain Orientation Control Layer
Bottom Electrode100 nm ± 10%Lower Electrode
Adhesion LayercustomizedAdhesion Layer
Substratecustomized4/6/8-inch Options Available

Key Performance Indicators (Characteristics)

● Piezoelectric Constant (d31): 200 pC/N — Ensures highly efficient mechanical displacement output.

● Piezoelectric Coefficient (e31): −15 C/m² — Provides a highly sensitive electrical charge response.

● High Uniformity: Verified via XRD diffraction analysis, the PZT film exhibits a strong (100) orientation, ensuring exceptional performance uniformity across the entire wafer.

PZT characteristicsPolycrystal PZT
Piezoelectric constant  d31200 pC/N
piezoelectric coefficient e31-14 C/m²
Curie temperatureX ℃

Typical Stack of PZT Piezoelectric Ceramic Wafers

SEM image and XRD

Applications

Five Key Application Areas

1. Piezoelectric Ultrasonic Transducers (pMUT)

Leveraging the high piezoelectric constant of PZT thin films to create high-frequency, miniaturized ultrasonic arrays. Widely applied in under-display fingerprint recognition, gesture sensing, and automotive ultrasonic radar systems.

2. RF Filters & Communications (RF MEMS)

In 5G and 6G communication systems, high-performance piezoelectric materials are critical for manufacturing FBAR and SAW filters, enabling wider bandwidths and lower insertion losses.

3. Acoustic MEMS (Speakers/Microphones)

Empowering MEMS speakers with superior transient response and Sound Pressure Levels (SPL), while simultaneously boosting the Signal-to-Noise Ratio (SNR) of MEMS microphones to enable high-definition audio capture.

4. Precision Fluid Control (Inkjet Printheads)

Utilizing high-speed vibrations in the d31 mode to achieve nanoliter-level precision in ink droplet volume control; serves as the core actuation component for industrial-grade, high-resolution inkjet printing systems.

5. Medical Aesthetics & Micro-pumping

Driving medical nebulizers and aesthetic ultrasonic pumps. Leveraging the compact size and high reliability of PZT thin films, we enable the efficient atomization and precise delivery of liquid medications.

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