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Porous ceramic Vacuum chuck
Quick Detail:
1. Other names: Porous ceramic Vacuum chuck,Porous SiC chuck,porous chuck.
2. Application: High-performance vacuum adsorption device designed for precision adsorption and fixation of wafers and ingots, suitable for semiconductor manufacturing, wafer cutting, precision machining, high temperature epitaxy, etching, ion implantation and other scenarios.
3. Core parameters:
Porosity adjustable (10-200μm).
Ultra-high temperature (≤1600°C) , excellent thermal shock resistance.
Adsorption vacuum: standard -90kPa (can be customized to 100kPa).
Suction cup size: Support 4/6/8/12 inch wafers, ingot size can be customized.
Description
Ceramic vacuum chuck is a high-performance vacuum adsorption device designed for precision adsorption and fixation of wafers and ingots. It adopts a composite structure of porous ceramic + metal outer ring, combined with customized design of air channels and pores to achieve uniform adsorption force distribution and high stability. Suitable for semiconductor manufacturing, wafer cutting, precision machining and other scenarios, support high temperature, high speed motion environment, can meet the compatibility requirements of various sizes of wafers/ingot.
Customized service
Size and load customization
Stomata and airway optimization
Special environment adaptation
Design example
Applications
Semiconductor fabrication
Epitaxial growth: Stable adsorption of SiC wafers at high temperatures to avoid warping and contamination.
Lithography and etching: Precise positioning in the high-speed moving platform (acceleration ≤10G) to ensure the accuracy of graphic alignment.
Ingot processing
Cutting and grinding: Adsorption of heavy crystal ingot (such as sapphire, silicon carbide ingot) to suppress edge cracking caused by vibration.
Scientific research and special technology
High temperature annealing: porous silicon carbide suction cups work for a long time at 1600°C, without deformation and venting pollution.
Vacuum coating: High air tightness design, compatible with PVD/CVD cavity environment.
Competitive Advantage
Core structure and material advantages
1.Multilayer composite design
Surface layer: Porous ceramic (optional porous silicon carbide or porous graphite), aperture adjustable (10-200μm) to ensure uniform transfer of adsorption force to the wafer surface to avoid local stress concentration.
Matrix: High rigid metal frame (stainless steel or aluminum alloy) to provide structural support and air tightness.
Airway and pores: The internal network of precisely machished airways and evenly distributed micropores support rapid vacuum extraction (adsorption force up to -90kPa) and instantaneous release.
2. Comparison of material properties
| Material | Porous silicon carbide | Porous graphite |
| Temperature Resistance | Ultra-high temperature (≤1600°C), excellent thermal shock resistance | Medium high temperature (≤800°C), better thermal conductivity |
| Chemical durability | Acid and alkali corrosion resistance, plasma corrosion resistance | Resistant to non-oxidizing gases, lower cost |
| Applicable scene | High temperature epitaxy, etching, ion implantation | Wafer cutting, grinding, packaging |
3. Key performance and technical parameters
| Description | Remark |
| Chuck size | Support 4/6/8/12 inch wafers, ingot size can be customized |
| Loading | Single plate maximum load 50kg (height ≤300mm) |
| Working Temperature | Porous silicon carbide: -50°C~1600°C; Porous graphite: -50°C~800°C |
| Adsorption vacuum | Standard -90kPa (customizable to -100kPa) |
FAQ
Q: How to choose porous silicon carbide and porous graphite chuck? What are the main differences between porous silicon carbide and porous graphite chuck in high-temperature processes? How to choose the right material for the application scenario?
A: Porous silicon carbide chuck:
Temperature resistance: can work stably at extreme high temperatures ≤1600°C (such as SiC epitaxy, high temperature annealing), excellent thermal shock resistance, suitable for the scene of drastic temperature fluctuations.
Corrosion resistance: resist strong acid, alkali and plasma erosion, suitable for etching, ion implantation and other corrosive gas process.
Porous graphite Chuck:
Thermal conductivity: Higher thermal conductivity (200-400 W/m·K), suitable for scenarios requiring rapid heat transfer (such as wafer cutting heat dissipation).
Economy: Low cost, suitable for ≤800°C medium temperature environment (such as packaging, grinding).
Selection suggestions:
If the process temperature is > 800°C or corrosion resistance is required, porous silicon carbide is preferred; If the pursuit of cost-effective and low process temperature, can choose porous graphite.
