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High-purity CVD-SiC source blocks and chunks
High-purity CVD-SiC source blocks and chunks

High-purity CVD-SiC source blocks and chunks


Semixlab’s high-purity CVD SiC source blocks and chunks are engineered to meet the stringent demands of advanced SiC crystal growth via Physical Vapor Transport (PVT). Manufactured through a controlled chemical vapor deposition (CVD) process, these source materials deliver exceptional purity, density, and structural uniformity—critical for achieving stable sublimation behavior and high-quality boule growth. Semixlab’s CVD-SiC sources are specifically optimized to minimize metallic and nitrogen impurities, reduce micropipe formation, and enable uniform vapor phase transport throughout long growth cycles. Looking forward to your further inquiry.

Description

In the production of 6-inch and 8-inch SiC wafers, the traditional physical vapor transport (PVT) method often hits a bottleneck: Carbon Dust (C-dust) contamination and unstable sublimation rates from SiC powder.

We developed our high-purity CVD-SiC source blocks and chunks specifically to tackle the precision limits of traditional powder sources. Starting with semiconductor-grade CVD-SiC precursors, we process the material through a proprietary cycle of crushing and grading. This isn't just about cleaning the surface—it’s a deep purification process that transforms reclaimed components into high-performance source material for the next generation of SiC wafers.The result is a high-density, 7N-grade source material that optimizes thermal field gradients and dramatically increases crystal growth yield.

Specifications

Specifications & Ordering

● Purity: 6N5 to 7N

● Size: 5mm - 50mm (Customizable)

● Packaging: Double-layered, vacuum-sealed anti-static PE bags.

● Lead Time: Stable supply chain with global shipping capabilities.

The Next-Generation Source Material for PVT-based SiC Crystal Growth

Applications

Targeted Applications

PVT SiC Crystal Growth: Ideal for 4H-SiC conductive and semi-insulating substrates.

8-Inch Wafer Scale-up: Designed for the larger thermal fields of next-gen reactors where powder instability is magnified.

High-End R&D: For labs requiring the lowest possible EPD (Etch Pit Density) and MPD.

Semixlab SiC Raw Materials

The Semixlab Edge: Data-Backed Reliability

As the industry moves toward 8-inch SiC manufacturing, the uniformity of source materials becomes the primary driver of equipment uptime. CVD-SiC chunks provide the high-stacking density and predictable sublimation required for long-cycle, high-yield crystal runs.

GDMS Certified: Every batch is shipped with a full-element GDMS analysis report.

Custom Grading: We offer precise size sorting (e.g., 5-20mm or 20-50mm) to match your specific crucible geometry.

Competitive Advantage

The Semixlab Advantage: Higher Yields, Lower Costs

High-purity CVD-SiC Chunks

7N Ultra-Purity: Total metallic impurity control isn't just a goal—it’s our standard. Using CVD-based raw materials, we provide a 99.99999% pure source that ensures your 4H-SiC crystals remain defect-free from the seed up.

Breaking the Growth Barrier: Most fabs are stuck at 0.5 mm/h. Semixlab chunks facilitate superior mass transfer, pushing your PVT process to 1.46 mm/h. It’s the fastest way to scale your 8-inch production.

Clean Sublimation: Traditional powders suffer from "C-dust" contamination. Our solid chunk form ensures zero particulates in the vapor phase, curbing MPD and keeping dislocation counts around 3000 cm⁻².

Industrial Efficiency: We offer a sustainable, high-purity alternative by reclaiming semiconductor-grade CVD-SiC. You get a material that is purer than synthetic powder but priced for mass production.

Technical Comparison: Chunks vs. Traditional Powder

FeatureTraditional SiC PowderSemixlab CVD-SiC Chunks
Physical FormFine Powder (μm to mm scale)Uniform Chunks (5–50 mm)
Purity Level5N - 6N7N (99.99999%)
Carbon Dust RiskHigh (leads to inclusions)Non-existent
Growth Rate0.4 - 0.7 mm/hUp to 1.46 mm/h
Packing DensityVariable/LowHigh & Consistent
Thermal StabilityProne to "crusting" at the bottomStable sublimation kinetics
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