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High Purity CVD SiC Bulk Material
Semixlab offers high-purity CVD SiC bulk materials designed specifically for PVT SiC single crystal growth, providing a reliable source of raw materials. Our SiC bulk materials are manufactured using advanced chemical vapor deposition (CVD) technology, featuring ultra-low impurity content, high density, and excellent thermal stability, ensuring stable sublimation behavior in physical vapor transport (PVT) processes. With rigorous quality control and consistent batch-to-batch performance, Semixlab helps customers achieve reliable and scalable SiC crystal growth processes. We look forward to your inquiry.
Description
High-Purity CVD Solid SiC Bulk Material is a high-purity, high-density polycrystalline silicon carbide material produced via the Chemical Vapor Deposition (CVD) process. It is specifically designed for the growth of silicon carbide single crystals using the Physical Vapor Transport (PVT) method and serves as a next-generation source material to replace traditional SiC powder.
This product is manufactured by recycling and reusing discarded high-purity CVD-SiC semiconductor components. Through processes such as crushing, grading, and purification, it is transformed into block-shaped raw material with controlled dimensions. It offers core advantages including ultra-high purity, absence of carbon dust contamination, and fast growth rates.
Why Choose CVD-SiC Bulk Material as the PVT Source Material?
1. Technological Breakthrough
Recent studies have shown that using crushed CVD-SiC bulk material as the PVT source material enables the rapid growth of SiC single crystals under high vertical temperature gradients (~3.8 °C/mm), achieving a growth rate of 1.46 mm/h while maintaining excellent crystal quality— —with a full width at half maximum (FWHM) of the (0004) peak in the X-ray diffraction pattern of only 18.9 arcsec.
2. Addressing Inherent Issues with Traditional Powder Sources
Traditional SiC powder contains a large number of fine particles that preferentially sublimate at high temperatures, releasing impurities and generating “C-dust” (solid carbon particles). At high growth rates, these particles can be carried by gas flow to the crystal surface, causing inclusion defects. CVD-SiC Bulk Material contains no fine particles, fundamentally resolving this issue.
3. Resource Recycling
CVD-SiC Bulk Material is derived from high-purity CVD-SiC components (such as graphite boats and heaters) used in semiconductor processes. After being recovered and crushed, these materials are reused, ensuring ultra-high purity while enabling the sustainable utilization of resources.
Customized Services
We can provide the following services based on the specific needs of our clients' PVT growth processes:
| Customization Options | Specification Range |
| Block Size | 5 mm – 50 mm (gradable upon request) |
| Purity Grade | 7N (99.99999%) |
| Doping Type | High resistivity / Low resistivity (N-type doping) |
| Packaging | Cleanroom packaging, Class 100/1000 optional |
Specifications
Technical Parameters
| Parameters | Typical Value |
| Density | 3.21 g/cm³ (Theoretical Density) |
| Purity | ≥ 99.99999% (7N) by GDMS |
| Flexural Strength (Room Temperature) | 372–539 MPa |
| Flexural Strength (1300°C) | 558 MPa |
| Thermal Conductivity | 220–280 W/(m`K) |
| Coefficient of Thermal Expansion | 4.5 × 10⁻⁶ /K (RT–1000°C) |
| Resistivity | 0.1 – 1.0 Ω`cm (Customizable) |
| Hardness (Vickers) | 2800 HV |
| Average Block Size | 5–50 mm (Customizable) |
Typical Impurity Content (GDMS Analysis)
| Element | Content(ppb) |
| Na | < 2 |
| Fe | < 35 |
| Cr | < 26 |
| Co | < 1.3 |
| Cu | < 50 |
| Zn | < 9 |
Applications
Application Scenarios
Main Application: Source material for PVT-grown SiC single crystals
This product is specifically designed for the physical vapor transport (PVT) method of growing 4H-SiC and 6H-SiC single crystal substrates, serving as a replacement material for high-purity silicon and carbon sources.
Process Principle:
1. At high temperature (2100–2500°C) and low pressure (~4 kPa), CVD-SiC bulk material sublimates to produce gaseous species such as Si, SiC₂, and Si₂C.
2. Driven by the temperature gradient, these gaseous species are transported to the seed crystal surface.
3. Recrystallization on the seed crystal forms high-quality SiC single crystals.
| Comparison Items | Traditional SiC Powder | CVD-SiC Bulk Material |
| Particle Size | 5–50 mm | bulk |
| Carbon Dust Issue | Prone to C dust generation, leading to inclusions | No fine particles, no C dust |
| Impurity Distribution | High impurity concentration in small particles | Uniform, extremely low impurity levels |
| Growth Rate | 0.3–0.8 mm/h | Up to 1.46 mm/h |
| Temperature Gradient | Smaller | Larger, facilitating rapid growth |
Competitive Advantage
| Features | Description |
| Ultra-high Purity | Purity up to 99.99999% (7N), extremely low metal impurity content (ppb level) |
| No Carbon Dust Pollution | Bulk form contains no fine particles, avoiding crystal defects caused by "C dust" generated at high temperatures in traditional powder sources. |
| High Growth Rate | Using CVD-SiC bulk sources, a SiC single crystal growth rate of up to 1.46 mm/h can be achieved, far exceeding the 0.3–0.8 mm/h of traditional powder sources. |
| Good Crystal Quality | Maintains low microtube density and low dislocation density (~3000 cm⁻²) even at high growth rates, with crystal quality comparable to commercial wafers. |
| Large Temperature Gradient Adaptability | Bulk form generates a larger temperature gradient in the thermal field, which is beneficial for rapid mass transfer and stable growth. |
| Cost Competitiveness | Recycling high-purity CVD-SiC components discarded in semiconductor processes enables resource reuse, resulting in significant cost advantages. |
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