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CVD Solid SiC Focus Rings
Semixlab’s CVD solid SiC focus rings are engineered for advanced plasma etching environments, delivering exceptional plasma stability, ultra-low contamination, and extended service life. Manufactured using high-density chemical vapor deposition (CVD) silicon carbide, these focus rings provide superior resistance to plasma erosion and chemical attack, making them ideal for critical etch processes in semiconductor fabrication. We look forward to your further inquiry.
Description
Engineering the Future of Sub-7nm Etch Yield99.99999% Ultra-High Purity | Stable HAR Etching | Better Alternative to Silicon Rings
In the age of 300+ layer 3D NAND and GAA transistors, traditional consumables are the main cause of yield issues.Semixlab’s CVD solid SiC focus rings are designed to handle the high-density plasma needed for high aspect ratio (HAR) etching.They create a stable, particle-free environment that standard silicon (Si) rings cannot provide.
Industry Standard: Why Leading Fabs Transition to Solid SiC
7-Nines (99.99999%) Metallic Purity: Using our proprietary Advanced Chemical Vapor Deposition process, we achieve total metallic impurities < 0.1 ppm. This plays a key role in avoiding charge-related defects and heavy metal pollution in advanced logic and memory chips.
Precision Edge Roll-off (ERO) Control:Our solid SiC rings keep stable electrical resistance and high thermal conductivity (≥ 150 W/m·K).This creates a uniform plasma sheath at the wafer edge.
This directly solves the Edge Roll-off issues that plague 12-inch wafer uniformity.
Erosion Resistance for HAR Etching: In high-energy Fluorine-based (CF4/CHF3) and Chlorine-based (Cl2) plasma, Solid SiC exhibits an erosion rate 80% lower than single-crystal Silicon. This extends the PM (Preventative Maintenance) interval, significantly lowering the Total Cost of Ownership (CoO).
Monolithic "Solid" Integrity: Unlike SiC-coated Graphite, our parts are 100% dense bulk SiC. This eliminates the risk of Micro-cracking or Coating Delamination, preventing catastrophic Particle Contamination during high-power etch cycles.
Optimized for Next-Gen Etch Platforms
Our manufacturing center utilizes 5-axis High-Speed CNC and Laser Metrology to ensure 100% compatibility with OEM specifications for:
● Conductor Etch: Poly-Si and Silicide Etching.
● Dielectric Etch: High Aspect Ratio (HAR) contact and trench etching.
● Compatibility: Drop-in replacement for Lam Research (Kiyo/Versys), Applied Materials (Centris), and TEL (Tactras/Vigus) platforms.
Specifications
| Technical Parameter | Semixlab CVD Solid SiC | Industry Benchmark (Si) | Competitive Edge |
| Chemical Purity | 99.99999% (7N) | 99.999% (5N) | Eliminates ion-leakage |
| Phase Composition | 100% β-SiC (Cubic) | Single Crystal Si | Isotropic etch resistance |
| Relative Density | ≥99.8% (3.20 g/cm3) | N/A | Zero-porosity structure |
| Vickers Hardness | 28 - 30 GPa | ~9 GPa | Resists ion bombardment |
| Surface Roughness | Ra < 0.2 μm | Ra ~0.5μm | Minimal polymer adhesion |
Applications
Key Application Fields
Where extreme purity and plasma resilience are required, our CVD Solid SiC stands as the industry standard:
● Scaling 3D NAND & DRAM: Designed for the challenges of HAR (High Aspect Ratio) etching. It provides the stability required to etch through 300+ layers without profile distortion.
● Sub-7nm Logic Nodes: Specifically for FinFET and GAA architectures. We help fabs eliminate trace metal contamination, protecting the delicate lattice of next-gen transistors.
● Power Semiconductor Hub: Whether it’s SiC epitaxy or deep trench etching for GaN, our parts handle the high thermal loads of wide-bandgap production.
● TSV & Advanced Packaging: Optimized for Through-Silicon Via processes, ensuring the sidewall smoothness and vertical precision necessary for 2.5D/3D integration.
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