Vacuum Hot pressing furnace for SiC crystal seed bonding
Semixlab’s Vacuum Hot Pressing Furnace for SiC Crystal Seed Bonding is engineered specifically for high-precision silicon carbide crystal growth workflows, where seed-to-substrate bonding quality directly determines crystalline integrity, sublimation stability, and wafer yield. This system delivers exceptionally uniform thermal fields, tightly controlled axial pressure, and ultra-clean vacuum environments—conditions essential for forming a defect-minimized and thermally stable seed interface prior to PVT or modified Lely SiC growth. We welcome your inquiry.
Description
Seed crystal bonding is one of the critical processes affecting crystal growth. Based on the characteristics of seed crystal bonding, Semixlab has developed specialized vacuum hot-press equipment for seed crystal bonding. This equipment effectively reduces various defects generated during the bonding process, thereby improving the yield of seed crystal bonding and the final quality of the crystals.
Ⅰ. Introduction to Seed Crystal Bonding Vacuum Hot Press Equipment
1. Used for seed crystal bonding prior to SiC crystal growth;
2. Bonded seeds maintain adhesion at 2300°C without detachment, achieving 100% bubble-free bonding with high flatness and clean wafer surfaces free of impurity adsorption;
3. The heating tray employs disc-type resistance heating, ensuring uniform temperature distribution, safe operation, and user-friendly handling;
4. Pressure sensors mounted beneath the tray precisely display the pressure applied to the workpiece.
II. Functional Overview of Seed Crystal Vacuum Hot Press Equipment
The Semixlab Seed Crystal Vacuum Hot Press Furnace is designed for vacuum-assisted hot pressing of silicon carbide seed crystals.
1. Double-layered water-cooled metal chamber effectively reduces furnace surface temperature, minimizes high-temperature hazards, and lowers environmental impact;
2. Capable of automatic pressure application and holding, gradual loading, and displacement with automated control;
3. Diverse vacuum system configurations allow selection of different vacuum levels based on process requirements;
4. Uniform pressure distribution and high temperature control precision;
5. Pressure application utilizes precision mechanical thrust mechanisms for accurate, stable pressure delivery, ensuring safe operation and environmental compatibility;
6. Universal joint connection between upper press head and thrust rod guarantees adaptive parallelism between upper head and lower tray during pressing, ensuring uniform pressure distribution;
7. Upper press head incorporates cushioning pressure application for smooth, gentle force delivery without impact, preventing workpiece fracture;
8. Temperature sensors integrated into the heat transfer plate interface with the temperature controller, enabling precise heating temperature and programmatic control;
9. Both the pallet and upper press head incorporate insulation devices to minimize heat loss.
Ⅲ. Semixlab Seed Crystal Vacuum Hot Pressing Equipment Performance and Features
1. Gradual vacuum extraction with controlled pumping rate;
2. Large chamber for ample upgrade potential;
3. Stable press head with automated operation;
4. Pressure ramping and release control with automatic pressure slope and recipe regulation;
5. Precise temperature control with programmable temperature and pressure cycles;
6. Customizable vacuum, pressure, and temperature parameters for diverse bonding processes;
7. Dense bonding with zero bubbles;
8. Ultra-low breakage rate—virtually no device-induced fractures;
9. Compatibility: Supports 6-12 inch wafers;
10. Maximum downward pressure: 1.6 T;
11. Ultimate vacuum: 5 Pa (cold);
12. Heating platform temperature uniformity: <±3℃, σ<4 (at 200℃);
13. Pressure fluctuation: <0.5%.
Specifications
Parameters of hot pressing furnace for seed bonding
| Description | Parameter |
| Power supply | Single phase/220 V/50 Hz |
| Rated heating power | 5.6 KW |
| Heating way | Heated disc |
| Max. heating temperature | 600 ℃ |
| Control accuracy at a constant Temp. | ±0.15 ℃ |
| Accuracy of Temp. measurement | 0.1 ℃ |
| Dimensions of vacuum chamber | Φ700 x 710 mm |
| Max. downforce | 1,600 KG |
| Form of down stamp head | Hard stamp head |
| Accuracy of downforce control | ±1.1 KG |
| Diameter of the heated plateform | Φ350 mm |
| Diameter of the down stamp head | Φ350 mm |
| Suited specification of seed | 12 inchs |
| Ultimate vacuum under cold-state | <5 Pa(cold) |
| Control mode of temperature | Automatic control |
| Messuring way of temperature | Thermocouple |
| Rated power of the power supply | 5.6 KW+ 2.3 KW |
| Control way/ Downforce control way | HMI Automatic control |
| Flow of cooling water | 15 L / min |
| Dimension of main unit | 1,700 x 1,200 x 2,500 mm |
| Weight of main unit | 1,200 KG |
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