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Quartz Diffusion Tube
Quartz Diffusion Tube

Quartz Diffusion Tube


Semixlab’s Quartz Diffusion Tubes are precision-engineered using 99.995% high-purity fused silica, designed for diffusion, oxidation, and annealing processes in semiconductor and photovoltaic production. With excellent thermal stability, minimal contamination, and customizable dimensions, these tubes ensure optimal furnace performance and wafer yield. Ideal for engineers and procurement teams seeking reliability and process compatibility.

Description

Semixlab's Quartz Diffusion Tubes are high-purity, thermally stable quartz components designed for diffusion, oxidation, and annealing processes in semiconductor manufacturing. Engineered to operate under extreme thermal conditions, these tubes are essential components in horizontal and vertical furnace systems used in the solar cells.

Ⅰ.Material Composition

Our diffusion tubes are made from 99.995% pure fused silica (SiO₂), sourced from top-tier raw material suppliers and processed using proprietary thermal forming and annealing techniques. This ensures exceptional resistance to thermal shock, chemical stability, and minimal ionic contamination — critical factors for maintaining wafer yield and equipment integrity.

● Material: High-Purity Synthetic Fused Silica

● Impurity Level: ≤10 ppm (Metallic impurities)

● Crystal Structure: Amorphous

Ⅱ.Critical Applications in Semiconductor Processing

Semixlab's Quartz Diffusion Tubes are indispensable in a variety of critical semiconductor fabrication steps, playing a vital role in achieving desired material properties and device performance:

Diffusion Processes

In diffusion furnaces, our tubes serve as the reaction chamber where dopant impurities (e.g., boron, phosphorus, arsenic) are introduced into semiconductor wafers at high temperatures. The tubes provide a hermetically sealed, contamination-free environment for precise control over doping profiles. Their thermal stability ensures uniform temperature distribution, leading to consistent dopant penetration and activation, which is crucial for defining device electrical characteristics.

Oxidation Processes

During thermal oxidation, silicon wafers are exposed to oxygen or water vapor at elevated temperatures within the quartz tube to grow a thin, insulating layer of silicon dioxide (SiO₂). This SiO₂ layer acts as a gate dielectric, isolation layer, or passivation layer. The high purity and dimensional stability of our tubes are paramount here, as they directly impact the uniformity, thickness, and electrical quality of the oxide layer, which are fundamental to device performance and reliability.

Annealing Processes

Annealing is used to repair crystal lattice damage caused by ion implantation and to activate implanted dopants. Our quartz tubes provide the clean and controlled high-temperature environment necessary for these annealing steps. The excellent thermal properties of the quartz ensure uniform heat treatment across the wafer, leading to effective defect reduction and optimal dopant activation, which significantly improves device electrical characteristics and long-term stability.

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