SiC Coated Isostatic Graphite Crucible
Semixlab SiC Coated Isostatic Graphite Crucible is engineered for demanding semiconductor applications, combining high-density isostatic graphite with a CVD silicon carbide coating for unmatched thermal stability, purity, and durability. Widely used in SiC crystal growth (PVT method), silicon single crystal growth, and high-temperature thermal treatment & diffusion processes, these crucibles deliver uniform heat distribution, minimize contamination, and extend service life.
Description
The SiC Coated Isostatic Graphite Crucible offered by Semixlab is engineered from premium isostatic graphite, known for its uniform density, fine grain structure, and exceptional mechanical strength under extreme conditions. A high-purity Chemical Vapor Deposition (CVD) silicon carbide (SiC) coating is applied to the graphite surface, creating a dense and protective layer that significantly enhances oxidation resistance, thermal stability, and chemical inertness. This advanced material combination ensures superior thermal conductivity, minimized contamination, extended service life, and consistent performance under ultra-high temperature semiconductor processing environments.
Specifications
Material Composition and Properties
Our crucible is crafted from two key materials:
·Isostatic Graphite Substrate: This base material is produced through an isostatic pressing process, which ensures a uniform, high-density structure with exceptional mechanical strength and thermal stability. This isotropic nature means its properties are consistent in all directions, preventing warping and cracking even under extreme thermal cycling. The high-purity graphite we use minimizes impurities, which is essential for preventing contamination in sensitive semiconductor processes.
·Silicon Carbide(SiC) Coating: Applied using an advanced Chemical Vapor Deposition (CVD) method, the SiC layer creates a dense, non-porous protective barrier.
| Basic physical properties of CVD SiC coating | |
| Property | Typical Value |
| Crystal Structure | FCC β phase polycrystalline, mainly (111) oriented |
| Density | 3.21 g/cm³ |
| Hardness | 2500 Vickers hardness(500g load) |
| Grain Size | 2~10μm |
| Chemical Purity | 99.99995% |
| Heat Capacity | 640 J·kg-1·K-1 |
| Sublimation Temperature | 2700℃ |
| Flexural Strength | 415 MPa RT 4-point |
| Young' s Modulus | 430 Gpa 4pt bend, 1300℃ |
| Thermal Conductivity | 300W·m-1·K-1 |
| Thermal Expansion(CTE) | 4.5×10-6K-1 |
Applications
Functional Role in Semiconductor Processes
1. SiC Crystal Growth (PVT Method)
In the Physical Vapor Transport (PVT) method for SiC crystal growth, the crucible plays a decisive role in achieving high-quality crystal production. The SiC-coated surface provides a chemically stable containment environment that prevents unwanted reactions between the graphite substrate and the raw SiC source material. This minimizes carbon contamination and enhances the uniformity of the crystal lattice. The crucible’s superior thermal conductivity ensures stable heat distribution, which is critical for controlling temperature gradients and reducing dislocation density in SiC boules. As a result, the crucible directly contributes to improved crystal yield and wafer quality for downstream semiconductor device fabrication.
2. Silicon Single Crystal Growth
During silicon single crystal growth processes(such as the Czochralski method), the crucible must withstand prolonged exposure to extremely high temperatures while maintaining chemical inertness. The SiC coating serves as a protective barrier against oxidation and impurity diffusion, ensuring that no contamination migrates into the molten silicon. This results in highly pure silicon crystals with fewer structural defects, which is essential for manufacturing advanced ICs, power devices, and photovoltaic cells. Additionally, the coating enhances the crucible’s service life, reducing replacement frequency and overall production cost.
3. High-Temperature Thermal Treatment and Diffusion Processes
In thermal treatment, annealing, and diffusion processes, semiconductor wafers are exposed to elevated temperatures where purity and stability are paramount. The SiC-coated crucible offers excellent resistance against sublimation and outgassing, preventing particle generation that could compromise wafer surfaces. Its thermal stability ensures uniform heating conditions, which supports precise dopant diffusion and consistent wafer performance. By maintaining a clean processing atmosphere and minimizing material degradation, the crucible helps manufacturers achieve reliable, defect-free wafers in large-scale production.
Competitive Advantage
Semixlab Advantages
Semixlab stands out as a trusted supplier by combining precision engineering and strict quality assurance. Every SiC Coated Graphite Crucible undergoes rigorous factory testing to ensure coating adhesion, thickness uniformity, and performance under thermal cycling. The company provides customized solutions, tailoring crucible dimensions, coating thickness, and surface properties to meet specific process requirements.
Beyond manufacturing, Semixlab also delivers technical consultation and application support, helping semiconductor engineers and procurement teams select the most suitable crucible design for their process conditions. With its strong commitment to quality and customization, Semixlab ensures reliable supply and long-term performance for advanced semiconductor production.
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