High Purity Isostatic Graphite Heater
Semixlab High Purity Isostatic Graphite Heaters are designed to deliver exceptional thermal performance, temperature uniformity, and contamination control for advanced semiconductor manufacturing processes. Manufactured from ultra-high purity fine-grain isostatic graphite, our heater is engineered for demanding applications including SiC crystal growth, MOCVD, epitaxy, diffusion furnaces, annealing systems, and high-temperature vacuum processing, Semixlab graphite heaters ensure reliable and repeatable process performance. Optional CVD SiC coating technology further enhances oxidation resistance, chemical durability, particle suppression, and service life. Looking forward to your further inquiry.
Description
At Semixlab, we design and supply High Purity Isostatic Graphite Heaters engineered for advanced semiconductor thermal processes where temperature uniformity, material purity, and long-term stability are critical. Built on ultra-fine grain isostatic graphite and enhanced with advanced coating technologies, our heaters deliver consistent performance in demanding environments such as SiC epitaxy, diffusion, MOCVD, and vacuum high-temperature processing.
Core Advantages of Isostatic Graphite
1. Fully Isotropic Structure (X = Y = Z)
Unlike molded or extruded graphite, isostatic graphite exhibits uniform thermal expansion in all directions, ensuring:
● Stable heating geometry
● Reduced thermal stress
● Minimal deformation under cycling loads
2. Ultra-Low Particle Generation
Fine microstructure significantly reduces surface shedding, making it ideal for cleanroom semiconductor environments.
3. Excellent Thermal Shock Resistance
Rapid heating and cooling cycles do not induce cracking or structural degradation.
4. High Mechanical Integrity
High density and uniform pore distribution improve long-term durability in continuous operation.
5. Semiconductor-Grade Purity Control
Advanced halogen purification removes metallic contaminants (Fe, Ni, Ca, Na), preventing wafer contamination.
Role of Graphite Heaters in Semiconductor Manufacturing
At Semixlab, our isostatic graphite heaters are engineered to serve as core thermal field components in advanced semiconductor equipment.
Key Applications:
1. Silicon Carbide (SiC) Crystal Growth (PVT Process)
● Provides stable high-temperature environment (>2000°C)
● Maintains controlled axial and radial thermal gradients
● Ensures consistent sublimation and crystal deposition conditions
2. MOCVD and Epitaxial Systems
● Acts as precision susceptor heater
● Ensures uniform wafer temperature distribution
● Supports high-quality epitaxial layer growth for GaN and SiC devices
3. Diffusion & Annealing Furnaces
● Delivers stable and repeatable heating zones
● Enables precise dopant diffusion control in silicon wafers
4. Vacuum & High-Temperature Processing
● Maintains structural stability under ultra-high vacuum
● Ensures long-term thermal field consistency in batch processing
Heater + SiC Coating: Advanced Custom Engineering Design
To meet the requirements of next-generation semiconductor nodes, Semixlab provides custom-designed graphite heater systems with advanced SiC coating integration.
Functional Advantages of SiC Coating:
● Particle Suppression: significantly reduces carbon dust generation
● Chemical Resistance: protects against H₂, NH₃, Cl₂, and corrosive process gases
● Oxidation Protection: extends heater lifetime in high-temperature environments
● Surface Hardening: improves mechanical durability and wear resistance
● Process Cleanliness: supports ultra-clean semiconductor manufacturing standards
Custom Engineering Capabilities
Semixlab offers full customization for heater systems:
● Electrical resistivity tuning for power optimization
● Geometry design for uniform thermal field distribution
● Heater-susceptor integration optimization
● Thermal expansion matching for multi-material assemblies
● Simulation-driven thermal performance validation
Engineering Practice & Application Recommendations
Based on long-term semiconductor equipment engineering experience, Semixlab recommends the following design principles:
Recommended Material Configuration:
| Application Area | Semixlab Recommendation |
| SiC PVT Growth Systems | High purity isostatic graphite + SiC coating |
| MOCVD Reactors | Fine-grain isostatic graphite heater + SiC coating |
| Diffusion Furnaces | Ultra-high purity isostatic graphite heater |
| Vacuum Annealing Systems | High-density isostatic graphite |
| Ultra-High Temperature (>2200°C) | C/C composite or hybrid structures |
Specifications
| Physical properties of isostatic graphite | ||
| Property | Unit | Typical Value |
| Bulk Density | g/cm³ | 1.83 |
| Hardness | HSD | 58 |
| Electrical Resistivity | μΩ.m | 10 |
| Flexural Strength | MPa | 47 |
| Compressive Strength | MPa | 103 |
| Tensile Strength | MPa | 31 |
| Young' s Modulus | GPa | 11.8 |
| Thermal Expansion(CTE) | 10-6K-1 | 4.6 |
| Thermal Conductivity | W·m-1·K-1 | 130 |
| Average Grain Size | μm | 8-10 |
| Porosity | % | 10 |
| Ash Content | ppm | ≤5 (after purified) |
| Basic physical properties of CVD SiC coating | |
| Property | Typical Value |
| Crystal Structure | FCC β phase polycrystalline, mainly (111) oriented |
| Density | 3.21 g/cm³ |
| Hardness | 2500 Vickers hardness(500g load) |
| Grain Size | 2~10μm |
| Chemical Purity | 99.99995% |
| Heat Capacity | 640 J·kg-1·K-1 |
| Sublimation Temperature | 2700℃ |
| Flexural Strength | 415 MPa RT 4-point |
| Young' s Modulus | 430 Gpa 4pt bend, 1300℃ |
| Thermal Conductivity | 300W·m-1·K-1 |
| Thermal Expansion(CTE) | 4.5×10-6K-1 |
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