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Porous Tantalum Carbide (TaC) Coated Graphite
Semixlab Porous TaC Coated Graphite combines high-purity graphite substrates with advanced TaC coating technology, delivering exceptional thermal stability, chemical resistance, and controlled porosity. Designed for SiC crystal growth and semiconductor epitaxy, it ensures reliable performance under extreme high-temperature environments.
Description
If you’ve ever run a SiC crystal growth furnace, you know that the crucible and its surrounding parts take a beating. High temperatures, silicon vapor, thermal cycling – it’s a harsh environment. One component that often gets overlooked but plays a huge role is the tray that sits underneath everything. At Semixlab, we make that tray out of porous graphite, then coat it with tantalum carbide (TaC) via CVD. Why? Because plain graphite won’t hold up long against silicon corrosion, and a fully dense ceramic can mess with gas flow. The porous structure gives you controlled permeability for vapor transport, while the TaC coating gives you a tough, chemically inert surface that doesn’t react with the silicon or shed particles.
Product Features
● Advanced TaC Coating for Ultra-High Temperature Applications
● Optimized Porous Structure for Thermal Field Regulation
● Improved SiC Crystal Quality Through Contamination Control
● Excellent Thermal Shock Resistance
● Customized Design for Different Growth Systems
Schematic diagram of porous tantalum carbide TaC
Pre-reaction material
| Typical physical properties of porous graphite | |
| ltem | Parameter |
| Bulk density | 0.89 g/cm2 |
| Compressive strength | 8.27 MPa |
| Bending strength | 8.27 MPa |
| Tensile strength | 1.72 MPa |
| Specific resistance | 130Ω-inX10-5 |
| Porosity | 50% |
| Average pore size | 70um |
| Thermal Conductivity | 12W/M*K |
Where do people use this tray?
● SiC Single Crystal Growth (PVT)
● Semiconductor Thermal Field Components
● Epitaxy and Advanced Materials Processing
Why Semixlab?
We’re not a generic machining shop. We specialize in thermal field materials for compound semiconductors. We’ve worked with SiC growers for years, so we understand the pain points – vapor corrosion, coating adhesion, thermal uniformity. Our CVD process is tightly controlled, and we do full inspection on every batch. Plus, we offer fast prototyping and global shipping, so you’re not waiting months for a trial part.
Specifications
| Physical properties of TaC coating | |
| Density | 14.3 (g/cm³) |
| Specific emissivity | 0.3 |
| Thermal expansion coefficient | 6.3*10-6/K |
| Hardness (HK) | 2000 HK |
| Resistance | 1×10-5 Ohm*cm |
| Thermal stability | <2500℃ |
| Graphite size changes | -10~-20um |
| Coating thickness | ≥20um typical value (35um±10um) |
FAQ
1. What is it?
A porous graphite tray coated with TaC, used inside SiC growth furnaces.
2. Why TaC over bare graphite?
Much better resistance to silicon vapor, lower particle shedding, longer life.
3. Why porous?
Helps gas diffusion and temperature distribution – gives you a more stable growth environment.
4. Can you custom-make it?
Yes – dimensions, porosity, coating thickness, and geometry to match your furnace.
Our Services
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