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CVD Tantalum Carbide (TaC) Coating

CVD Tantalum Carbide (TaC) Coating

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TaC Coated Rotation Plate
TaC Coated Rotation Plate

TaC Coated Rotation Plate


The TaC Coated Rotation Plate from Semixlab is specifically designed for high-temperature and chemically aggressive environments in semiconductor epitaxy and CVD processes. Featuring tantalum carbide (TaC) coating, this component provides exceptional thermal durability, corrosion resistance, and mechanical stability. Semixlab offers tailored coating thickness, substrate materials, and fast delivery to meet the precise demands of advanced wafer processing equipment.

Description

Semixlab TaC Coated Rotation Plate is engineered for high-temperature and corrosive environments commonly encountered in semiconductor epitaxy, CVD, and crystal growth processes. These rotation plates play a pivotal role in supporting wafer carriers or susceptors during continuous substrate rotation, ensuring uniform thermal distribution and deposition. By applying a tantalum carbide (TaC) coating, this component achieves exceptional durability, thermal stability, and process longevity in demanding vacuum and high-temperature semiconductor applications.

Semixlab's Customization & Support Services

● Custom Coating Thickness & Geometry

Whether for 200mm, 300mm, or customized rotation plates, Semixlanb's team delivers geometry-specific TaC coating solutions tailored to your process environment.

● Material Selection Consulting

Need help deciding between graphite, SiC, or quartz substrates? Our engineers assist in choosing the optimal base material for your TaC coating.

● Fast Prototyping & Small Batch Services

Ideal for R&D and pilot production, Semixlab supports low-MOQ orders with short lead times.

● Responsive After-Sales Support

From installation guidance to coating performance tracking, our technical team ensures you gain long-term value and reliability from every component we deliver.

Specifications
Physical properties of TaC coating
Density14.3 (g/cm³)
Specific emissivity0.3
Thermal expansion coefficient6.3*10-6/K
Hardness (HK)2000 HK
Resistance1×10-5 Ohm*cm
Thermal stability<2500℃
Graphite size changes-10~-20um
Coating thickness≥20um typical value (35um±10um)
Applications

● SiC and GaN Epitaxial Growth

● Metal Organic Chemical Vapor Deposition (MOCVD)

● Low/High Pressure Chemical Vapor Deposition (LPCVD / HPCVD)

● Sapphire and SiC Crystal Growth Furnaces

● Advanced Thin Film Processing Chambers

silicon carbide epitaxial growth furnace and core accessories

As a leading TaC Coated Rotation Plate manufacturer and supplier in China, With deep industry expertise, precision coating technology, and a strong commitment to innovation, Semixlab delivers TaC coated components that meet the rigorous standards of the semiconductor industry. We sincerely hope to become your long-term partner in China.

Competitive Advantage

Key Physical Properties & Performance Advantages

1. Exceptional Thermal Stability

TaC has a melting point exceeding 3880°C, making the coated rotation plate exceptionally stable during prolonged high-temperature processing.

This thermal resilience is crucial for MOCVD, LPCVD, and PVD systems, where substrates are exposed to fluctuating and extreme temperatures.

2. Superior Chemical Inertness

Tantalum carbide is chemically inert to most aggressive gases and corrosive byproducts, including chlorine, hydrogen, and halogenated compounds.

This chemical resistance ensures long-term performance and reduced contamination risks, critical for SiC epitaxy, GaN deposition, and oxide film growth.

3. Outstanding Hardness & Erosion Resistance

With a Vickers hardness above 2000 HV, the TaC-coated surface resists mechanical wear from rotating mechanisms and particle impact.

The advantage translates into extended service life and lower replacement frequency, minimizing maintenance downtime in semiconductor production
lines.

4. Excellent Coating Uniformity and Adhesion

Semixlab’s proprietary CVD coating process ensures dense, uniform, and well-adhered TaC layers, which are essential for consistent process results and minimal particle generation.

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