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CVD Tantalum Carbide (TaC) Coating

CVD Tantalum Carbide (TaC) Coating

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TaC Coated Porous Graphite Plate
TaC Coated Porous Graphite Plate

TaC Coated Porous Graphite Plate


Semiconductor manufacturing demands materials that can withstand extreme conditions while maintaining uncompromising purity and performance. The Semixlab TaC coated porous graphite plate is engineered precisely for this environment. It combines the unique benefits of high-purity porous graphite with an ultra-durable, protective Tantalum Carbide (TaC) coating, offering an advanced solution for the most demanding applications in compound semiconductor fabrication.

Description

Our TaC coated porous graphite plate is a high-performance composite material designed to overcome the limitations of traditional graphite components in high-temperature, reactive atmospheres. The base is a porous graphite substrate, a lightweight, highly stable form of graphite with a network of interconnected pores. This unique structure provides a high surface area and excellent thermal properties.

Using a precise Chemical Vapor Deposition (CVD) process, a dense, thin layer of Tantalum Carbide (TaC) is applied to the surface. This refractory ceramic coating acts as a robust protective barrier, sealing the porous graphite and dramatically enhancing its mechanical, chemical, and thermal performance.

Specifications
Physical properties of TaC coating
Density14.3 (g/cm³)
Specific emissivity0.3
Thermal expansion coefficient6.3*10-6/K
Hardness (HK)2000 HK
Resistance1×10-5 Ohm*cm
Thermal stability<2500℃
Graphite size changes-10~-20um
Coating thickness≥20um typical value (35um±10um)
Applications

Applications in Advanced Semiconductor Manufacturing

The synergy of porous graphite and a TaC coating makes this material an indispensable component in several key semiconductor processes, particularly those involving high temperatures and corrosive gases. Its primary applications include:

● Silicon Carbide (SiC) Crystal Growth: The TaC-coated plates are essential for Physical Vapor Transport (PVT) crystal growth furnaces. They are used as crucibles, insulation boards, flow guides, and seed holders. The coating prevents carbon contamination of the SiC crystal, leading to higher-quality, defect-free crystals with improved yield rates.

●Metal-Organic Chemical Vapor Deposition (MOCVD): In MOCVD reactors for manufacturing advanced devices like GaN and GaAs, our plates serve as susceptors and wafer carriers. The TaC coating provides exceptional resistance to highly reactive gases such as hydrogen (H2) and ammonia (NH3), extending component lifespan and maintaining process purity.

●High-Temperature Annealing & Epitaxy: The material's thermal stability and chemical inertness make it ideal for furnace components used in high-temperature annealing and epitaxial growth processes, ensuring uniform heating and preventing contamination.

Competitive Advantage

Key Physical Properties and Advantages

The TaC-coated porous graphite plate is defined by a set of superior properties that translate directly into significant operational benefits for your manufacturing line.

1. Extreme Thermal and Mechanical Stability

Property: Maintains structural integrity up to 2200°C (in a non-oxidizing atmosphere).

Advantage: This exceptional thermal stability allows for faster cycle times and use in the most extreme high-temperature processes without material degradation or shape deformation. The TaC coating also significantly increases the mechanical strength and abrasion resistance of the porous graphite, making it more durable and resistant to chipping and wear.

2. Superior Chemical Inertness & Purity

Property: The TaC coating is highly resistant to a wide range of corrosive gases, including H2, HCl, and NH3. The material has an ultra-low impurity level, typically < 5ppm.

Advantage: This provides a gas-tight barrier that prevents the outgassing of impurities from the graphite substrate. This drastically reduces contamination and particle shedding, which are major causes of defects and low yield in semiconductor fabrication.

3. Optimized Thermal Management

Property: The material has a high thermal conductivity ( 120−160W/m⋅K for porous graphite) and a specific emissivity of approximately 0.3.

Advantage: The combination of these properties ensures excellent and uniform heat distribution across the plate's surface. This is critical for processes like crystal growth and epitaxy, where temperature gradients must be minimized to achieve high-quality, uniform films and crystals.

With decades of expertise in advanced ceramic coatings and graphite solutions for semiconductor applications, Semixlab delivers products engineered for maximum performance, precision, and durability.Our TaC coated porous graphite plate is the preferred choice for semiconductor manufacturers seeking reliable, high-purity, and long-lasting solutions. We welcome your further inquiries.

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