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Single wafer epi graphite susceptor
| Place of Origin: | China |
| Brand Name: | Semixlab |
| Model Number: | SWEGS0001 |
| Certification: | ISO9001 |
| Minimum Order Quantity: | 1pc |
| Price: | Customized |
| Packaging Details: | Standard export box |
| Delivery Time: | 30-45days |
| Payment Terms: | To be negotiated |
| Supply Ability: | 300pcs per months |
Description
ASM monolithic epitaxial tray is designed for high-performance silicon carbide (SiC), gallium nitride (GaN) and other third generation semiconductor epitaxial process, the product includes a set of graphite tray, graphite ring and other accessories, using high purity graphite substrate + vapor deposition silicon carbide coating composite structure, taking into account high temperature stability, chemical inertia and thermal field uniformity. It is the core bearing component of high-precision epitaxial sheet in mass production.
Quick Detail:
1. Other names: 6 inch wafer epi susceptor, 8 inch wafer epi susceptor, graphite susceptor, single wafer susceptor.
2. Application: For high-performance silicon carbide (SiC), gallium nitride (GaN) and other third generation semiconductor epitaxial process.
Specifications
| Basic physical properties of CVD SiC coating | |
| Property | Typical Value |
| Crystal Structure | FCC β phase polycrystalline, mainly (111) oriented |
| Density | 3.21 g/cm³ |
| Hardness | 2500 Vickers hardness (500g load) |
| Grain Size | 2~10μm |
| Chemical Purity | 99.99995% |
| Heat Capacity | 640 J·kg-1·K-1 |
| Sublimation Temperature | 2700℃ |
| Flexural Strength | 415 MPa RT 4-point |
| Young's Modulus | 430 Gpa 4pt bend, 1300℃ |
| Thermal Conductivity | 300W·m-1·K-1 |
| Thermal Expansion(CTE) | 4.5×10-6K-1 |
Core Functions and Design Highlights
Material innovation: graphite +SiC coating
Graphite
-Ultra-high thermal conductivity (>130 W/m·K), rapid response to temperature control requirements, to ensure process stability.
-Low thermal expansion coefficient (CTE: 4.6×10⁻⁶/°C), reduce high temperature deformation, prolong service life.
| Physical properties of isostatic graphite | ||
| Property | Unit | Typical Value |
| Bulk Density | g/cm³ | 1.83 |
| Hardness | HSD | 58 |
| Electrical Resistivity | μΩ.m | 10 |
| Flexural Strength | MPa | 47 |
| Compressive Strength | MPa | 103 |
| Tensile Strength | MPa | 31 |
| Young' s Modulus | GPa | 11.8 |
| Thermal Expansion(CTE) | 10-6K-1 | 4.6 |
| Thermal Conductivity | W·m-1·K-1 | 130 |
| Average Grain Size | μm | 8-10 |
CVD SiC coating
-Corrosion resistance. Resist attack by reaction gases such as H₂, HCl, and SiH₄. It avoids contamination of the epitaxial layer by volatilization of the base material.
-Surface densification: the coating porosity is less than 0.1%, which prevents the contact between graphite and wafer and prevents the diffusion of carbon impurities.
-High temperature tolerance: long-term stable work in the environment above 1600°C, adapt to the high temperature demand of SiC epitaxy.
| Basic physical properties of CVD SiC coating | |
| Property | Typical Value |
| Crystal Structure | FCC β phase polycrystalline, mainly (111) oriented |
| Density | 3.21 g/cm³ |
| Hardness | 2500 Vickers hardness (500g load) |
| Grain Size | 2~10μm |
| Chemical Purity | 99.99995% |
| Heat Capacity | 640 J·kg-1·K-1 |
| Sublimation Temperature | 2700℃ |
| Flexural Strength | 415 MPa RT 4-point |
| Young's Modulus | 430 Gpa 4pt bend, 1300℃ |
| Thermal Conductivity | 300W·m-1·K-1 |
| Thermal Expansion(CTE) | 4.5×10-6K-1 |
Thermal field and airflow optimization design
Uniform thermal radiation structure
The susceptor surface is designed with multiple thermal reflection grooves, and the ASM device's thermal field control system achieves temperature uniformity within ±1.5°C (6-inch wafer, 8-inch wafer), ensuring consistency and uniformity of epitaxial layer thickness (fluctuation <3%).
Air steering technique
Edge diversion holes and inclined support columns are designed to optimize the laminar flow distribution of reaction gas on the wafer surface, reduce the difference in deposition rate caused by eddy currents, and improve doping uniformity.
Compatibility and reliability
Multi-scene adaptation
Compatible with 4H-SiC, 6H-SiC homoepitaxy, and GaN-on-SiC heteroepitaxy processes, support N /P type doping (such as N₂, Al doping).
Long life maintenance
The hardness of silicon carbide coating reaches 430 Gpa 4pt bend, 1300℃, the resistance to particle erosion is increased by more than 3 times, the service life of a single tray exceeds 5000 process hours, and the cost of comprehensive consumables is reduced.
Application Scenarios
Car-scale SiC power device
5G RF front-end module
Photovoltaic and energy storage systems
Technical Specifications Overview
| Item | Specification |
| Base material | Isostatic high purity graphite (purity >99.9995%) |
| Coating technology | Chemical vapor deposition (CVD) of silicon carbide |
| Wafer size | 4/6/8 inch (customizable) |
| Maximum working temperature | 1650°C (Inert gas environment) |
| Temperature uniformity | ≤±1.5°C (6-inch wafer, steady state process) |
| Coating thickness | 50-500 μm (Adjustable, ±10 μm accuracy) |
Competitive Advantage
Process consistency: Through the original matching design of ASM equipment, the adjustment time of thermal field and air flow is reduced.
Zero pollution commitment: SiC coatings pass SEMI standard metal impurity detection (Fe, Ni, etc <1ppb).
Quick response maintenance: Modular tray structure, support for online replacement and technical support.