SiC Coated Wafer holder

SiC Coated Wafer Holder is a wafer support designed for semiconductor high-temperature processes. It uses high-purity graphite substrate + CVD SiC coating, has excellent corrosion resistance, thermal shock resistance and low pollution characteristics, and is widely used in key processes such as SiC/GaN epitaxy, MOCVD, CVD, and diffusion to ensure stable transmission and high-yield production of wafers in high-temperature environments.

Application:

SiC (Silicon Carbide) coated wafer carriers are used in semiconductor, photovoltaic, LED and advanced electronics manufacturing due to their unique properties.

Services that can be provided: 

customer application scenario analysis, matching materials, technical problem solving.

Technical Parameters

Main application fields

Ecological chain verification endorsement

Semixlab SiC Coated Wafer holder uses high-purity silicon carbide powder and is ISO-certified, making it a "reliable partner" for high-end semiconductor manufacturing with quantifiable performance improvements (yield, life, cleanliness).

Typical application process

Substrate pretreatment → Material selection → Machining → Cleaning → Surface roughening（Chemical etching）→ SiC coating deposition（Chemical Vapor Deposition (CVD)） → Post-processing→ High temperature annealing → Surface polishing → Defect Detection → Performance Verification → Adhesion Testing, Corrosion Resistance, Thermal Cycle Testing → Cleaning and Packaging

Through process parameter optimization, Semixlab SiC Coated Wafer holder has achieved breakthrough progress in semiconductor manufacturing processes (such as CVD, epitaxial growth, etching, etc.), gradually replaced imports in the semiconductor market. If you need to obtain detailed technical white papers or arrange sample testing, please contact our technical support team.

Semixlab SiC Coated Wafer holder core advantages

Excellent high temperature resistance

High temperature stability: SiC has a melting point of up to 2700℃ and can work stably for a long time in a process environment of 1000℃~1600℃ (such as CVD, MOCVD, epitaxial growth, etc.), which is much better than stainless steel or aluminum alloy carriers. Low thermal expansion coefficient, not easy to deform at high temperature, and maintain wafer positioning accuracy.

Thermal shock resistance: SiC has high thermal conductivity, can quickly and evenly dissipate heat, and reduce the risk of cracking caused by sudden temperature changes (more durable than graphite).

Excellent corrosion and pollution resistance

Resistant to corrosive gases such as HCl, H2, NH3(common in etching and epitaxial processes), preventing the carrier from being corroded and causing particle contamination. Strong anti-oxidation performance, more stable than graphite in high-temperature oxygen-containing environments (graphite requires coating protection, while SiC itself is resistant to oxidation). SiC coating can achieve a purity of more than 99.999%, preventing metal impurities (such as Fe, Ni) from contaminating the wafer, and is particularly suitable for silicon-based and wide bandgap semiconductor (GaN, SiC) manufacturing.

High mechanical strength and wear resistance

High hardness (Mohs hardness 9.2, second only to diamond), the surface is not easy to scratch, reducing the risk of particle shedding and extending the service life. Suitable for processes that require frequent contact such as CMP (chemical mechanical polishing), the wear resistance is better than metal or ceramic coatings. It is not easy to deform under high temperature load and maintains the flatness of the wafer (compared with graphite, which is easy to crack).

Excellent thermal conductivity and thermal uniformity

Fast heat conduction ensures uniform heating of the wafer (reduces uneven thickness during epitaxial growth). Suitable for rapid temperature rise and fall processes (such as RTP rapid annealing) to improve production efficiency. The thermal expansion coefficient of SiC is close to that of silicon (Si) and silicon carbide (SiC) wafers, reducing lattice defects caused by thermal stress.

Long life and low maintenance cost

In plasma environments (such as dry etching), SiC has better sputtering resistance than aluminum or quartz, and its life can be extended by 3 to 5 times. The surface is dense and smooth, and it is not easy to absorb process residues. It can be reused through high-temperature incineration or chemical cleaning.

Compatibility and design flexibility

SiC coatings can be deposited on substrates such as graphite, molybdenum, and carbon fiber, taking into account both lightness and high strength. Through CVD or spraying processes, complex structures of carriers (such as porous structures and embedded heating elements) can be prepared.