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SiC coated porous graphite disk for Si epitaxy
The SiC Coated Porous Graphite Disk from Semixlab Semiconductor is designed for advanced Si epitaxy reactors, where temperature uniformity and process cleanliness are critical. Built from high-purity isostatic porous graphite and protected by a dense CVD SiC coating, the disk ensures stable high-temperature operation, uniform gas diffusion, and exceptional resistance to hydrogen and chlorine corrosion.
Description
Semixlab’s SiC coated porous graphite disk is a precision-engineered component designed for advanced silicon epitaxy (Si epitaxial growth) systems. The base material is isostatic fine-grain porous graphite, featuring high thermal conductivity, low density, and an optimized open-pore structure. The surface is coated with a dense, high-purity silicon carbide (SiC) layer, deposited through chemical vapor deposition (CVD). This coating provides exceptional resistance to corrosion, particle generation, and chemical erosion in hydrogen and chlorinated environments.
Specifications
| Basic physical properties of CVD SiC coating | |
| Property | Typical Value |
| Crystal Structure | FCC β phase polycrystalline, mainly (111) oriented |
| Density | 3.21 g/cm³ |
| Hardness | 2500 Vickers hardness(500g load) |
| Grain Size | 2~10μm |
| Chemical Purity | 99.99995% |
| Heat Capacity | 640 J·kg-1·K-1 |
| Sublimation Temperature | 2700℃ |
| Flexural Strength | 415 MPa RT 4-point |
| Young' s Modulus | 430 Gpa 4pt bend, 1300℃ |
| Thermal Conductivity | 300W·m-1·K-1 |
| Thermal Expansion(CTE) | 4.5×10-6K-1 |
Applications
Function and Role in Si Epitaxy Process
In modern Si epitaxial CVD reactors, precise control of temperature uniformity and gas flow distribution is critical to achieving high-quality, defect-free epitaxial layers. The SiC coated porous graphite disk is strategically placed beneath the wafer susceptor or as part of the gas diffuser assembly to perform the following functions:
1. Gas Flow Equalization
The porous structure acts as a gas diffuser, ensuring uniform laminar flow of process gases (e.g., SiHCl₃, H₂, HCl) across the wafer surface. This helps eliminate flow turbulence and maintain consistent deposition rates across large wafer diameters (6–8 inches).
2. Thermal Field Uniformity
With high thermal conductivity and a tailored pore design, the disk distributes heat evenly, reducing radial temperature gradients. The SiC coating’s infrared reflectivity enhances energy utilization and stabilizes wafer temperature within ±1°C.
3. Corrosion and Particle Control
The SiC layer acts as a protective barrier, preventing graphite oxidation, hydrogen etching, and carbon outgassing. This ensures ultra-clean conditions, minimizing particle-induced defects in the epitaxial layer.
4. Long-Term Reliability
The combination of porous graphite and SiC coating provides 3–5× longer lifetime than uncoated graphite components, reducing downtime and maintenance frequency.
Semixlab specializes in advanced SiC coated graphite components for epitaxial growth, thermal processing, and crystal growth systems. Our in-house coating technology ensures dense, uniform, and high-purity SiC layers that extend component lifetime and maintain exceptional cleanliness under demanding process conditions. Customized designs are available based on your reactor configuration, pore size requirements, and thermal field. We look forward to your further inquiries.
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