SiC Coated Graphite Susceptor
Semixlab's SiC coated graphite susceptors are high-performance components designed for high-temperature processes such as semiconductor epitaxial deposition and MOCVD. They utilize a high-purity graphite substrate coated with a dense, chemically inert silicon carbide (SiC) layer via a CVD process. These susceptors offer excellent thermal uniformity, effectively prevent particle contamination, and significantly enhance component durability. Choosing our susceptors can help you improve process yield and reduce maintenance costs. We look forward to hearing from you.
Description
The SiC (Silicon Carbide) coated graphite susceptor is an essential component for semiconductor manufacturing, particularly in demanding high-temperature applications like epitaxial deposition and MOCVD (Metal-Organic Chemical Vapor Deposition).
These susceptors are engineered to hold and heat silicon wafers with exceptional precision, ensuring uniform temperature distribution and a pristine process environment. Our susceptors are crucial for producing high-quality, uniform thin films that are the foundation of reliable and high-performance semiconductor devices.
Ⅰ. Core Materials and Key Properties
Our susceptors are expertly constructed using a high purity graphite core and a protective layer of Silicon Carbide (SiC).
High-Purity Graphite: The graphite substrate provides the core structural integrity and thermal performance. Its excellent thermal stability allows it to operate at extremely high temperatures without deformation. The low thermal mass of graphite enables rapid and efficient heating and cooling, which is vital for quick cycle times in a production environment.
Silicon Carbide (SiC) Coating: The SiC coating is applied to the graphite through a CVD (Chemical Vapor Deposition) process. This creates a dense, non-porous surface that is extremely hard and chemically inert. SiC provides superior resistance to plasma erosion and attack from aggressive process gases, preventing contamination and particle generation. This ensures a clean process, extends the component's life, and protects the underlying graphite from damage.
Ⅱ. Functional Benefits in Wafer Fabrication
Our SiC coated graphite susceptors play a critical role in ensuring the quality and efficiency of semiconductor fabrication.
● Unmatched Thermal Uniformity: The susceptor's design, combined with the thermal properties of SiC and graphite, ensures that heat is distributed evenly across the entire wafer surface. This is vital for achieving uniform film thickness and consistent material properties, which are key to high device yield.
● Superior Contamination Control: The non-porous and chemically inert SiC coating prevents outgassing and particle shedding from the graphite substrate. This drastically reduces the risk of wafer contamination and defects, which is a common challenge in high-temperature processes.
● Enhanced Durability and Lifespan: The robust SiC coating acts as a protective shield against abrasive and corrosive elements, significantly extending the susceptor's operational lifespan. This reduces the frequency of replacement and lowers overall maintenance costs.
● High Process Repeatability: By providing a stable and consistent thermal and chemical environment, our susceptors allow for highly repeatable processes. This consistency is fundamental for large-scale production of reliable semiconductor devices.
At Semixlab, we are committed to providing the semiconductor industry with premium components and unparalleled Customization service. We offer comprehensive custom design and manufacturing for our SiC coated graphite susceptors. Our engineering team can collaborate with you to create a susceptor that perfectly matches your equipment specifications and unique process requirements.
Specifications
| Basic physical properties of CVD SiC coating | |
| Property | Typical Value |
| Crystal Structure | FCC β phase polycrystalline, mainly (111) oriented |
| Density | 3.21 g/cm³ |
| Hardness | 2500 Vickers hardness(500g load) |
| Grain Size | 2~10μm |
| Chemical Purity | 99.99995% |
| Heat Capacity | 640 J·kg-1·K-1 |
| Sublimation Temperature | 2700℃ |
| Flexural Strength | 415 MPa RT 4-point |
| Young' s Modulus | 430 Gpa 4pt bend, 1300℃ |
| Thermal Conductivity | 300W·m-1·K-1 |
| Thermal Expansion(CTE) | 4.5×10-6K-1 |
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