SiC Coated Graphite Holder for ICP

Multi-wafer Si epitaxial processing platform

Semixlab SiC Coated Graphite Holder for ICP is designed specifically for inductively coupled plasma etching and deposition. It uses a high-purity graphite substrate combined with a silicon carbide coating process to provide excellent high-temperature resistance, corrosion resistance, and oxidation resistance. It is suitable for harsh analytical environments, significantly extending component life and reducing maintenance costs. At the same time, we guarantee strict quality control, customized services, and fast delivery.

Application:

SiC coated graphite holder is a key component in semiconductor inductively coupled plasma (ICP) etching and deposition processes due to their high purity, high temperature resistance and excellent plasma erosion resistance.

Services that can be provided:

customer application scenario analysis, matching materials, technical problem solving.

Company profile:

Semixlab has 2 laboratories, a team of experts with 20 years of material experience, with R&D and production, testing and verification capabilities.

Technical Parameters

Main application fields

Ecological chain verification endorsement

Semixlab SiC Coated Graphite Holder for ICP's ecological chain verification covers raw materials to production, has passed international standard certification, and has a number of patented technologies to ensure its reliability and sustainability in the semiconductor and new energy fields.

For detailed technical specifications, white papers, or sample testing arrangements, please contact our Technical Support Team to explore how Semixlab can enhance your process efficiency.

Semixlab SiC Coated Graphite Holder for ICP core advantages

Super corrosion resistance

SiC-coated graphite holders utilize a chemical vapor deposition process to form a dense protective layer of silicon carbide on the graphite surface, effectively resisting corrosion from strong acids, bases, and organic solvents. Compared to traditional graphite or metal holders, these holders are more stable when handling highly corrosive samples, preventing contamination due to material degradation. They are particularly suitable for ICP applications involving long-term exposure to corrosive media.

High temperature stability

In the high-temperature ICP plasma environment, ordinary graphite is easily oxidized and ablated, but the SiC coating significantly inhibits the reaction between the graphite substrate and oxygen. Its high-temperature resistance ensures that the holder maintains its structural integrity under long-term high-temperature operating conditions, preventing instrument performance degradation due to thermal deformation or material loss. It is particularly suitable for the continuous testing needs of high-throughput laboratories.

High mechanical strength

SiC has a hardness close to that of diamond, and its coating significantly improves the wear resistance of the harder surface. In ICP, SiC coatings reduce surface wear and extend the precision of key component fit, thereby maintaining stable ion transmission efficiency and reducing replacement frequency.

Cost-effective

Compared to pure SiC or platinum, SiC-coated graphite maintains excellent performance while reducing costs by 30%-50%. Its lifespan is 3-5 times that of ordinary graphite holders, significantly reducing downtime and consumables. It is an optimally cost-effective solution, particularly for laboratories with limited budgets that require long-term stable operation.