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CVD Silicon Carbide (SiC) Coating

CVD Silicon Carbide (SiC) Coating

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SiC Coated Collector Top for Aixtron
SiC Coating Collector Top for Aixtron
SiC Coated Collector Top for Aixtron
SiC Coating Collector Top for Aixtron

SiC Coated Collector Top for Aixtron


Semixlab's SiC Coated Collector Top for Aixtron is a key component tailored for Aixtron MOCVD systems. It uses a high-purity silicon carbide (SiC) coating and has excellent high temperature resistance, corrosion resistance and thermal stability. As a core component for controlling contamination and maintaining thermal uniformity in the epitaxial cavity, it plays an irreplaceable role in the epitaxial growth process of third-generation semiconductor materials such as GaN and SiC. This product not only effectively reduces particle contamination and improves the quality of the epitaxial layer, but also significantly extends the equipment operation cycle. It is a key solution to ensure efficient and reliable epitaxial processes.

Description

With years of experience in production TaC coating and SiC coating, Semixlab can supply a wide range of SiC Coating Collector Top, collector center, collector bottom for Aixtron system. High quality SiC Coated Collector Top can meet many applications, if you need, please get our online timely service about Silicon Carbide Coating Collector Top. In addition to the product list below, you can also customize your own unique SiC Coating Collector Top according to your specific needs.

SiC coating collector top, SiC coating collector center, and SiC coating collector bottom are the three basic components used in the semiconductor manufacturing process. Let's discuss each product separately:

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1. SiC Coating Collector Top

Silicon Carbide SiC Coated Collector Top for Aixtron plays a crucial role in the semiconductor deposition process. It acts as a support structure for the deposited material, helping to maintain uniformity and stability during deposition. It also AIDS in thermal management, effectively dissipating the heat generated during the process. The top of the collector ensures the correct arrangement and distribution of the deposited material, resulting in high-quality and consistent film growth.

2. SiC Coated Collector Center

1) Airflow guiding function: Located in the center of the reaction chamber, the SiC Coated Collector Center helps optimize the gas flow field distribution in the MOCVD process, thereby improving the uniformity of epitaxial deposition.

2) Inhibiting the generation of impurity particles: The center is the area where the concentration of precursor reactants and the accumulation of by-products are relatively concentrated. The use of SiC coating can effectively reduce the adhesion of sediments and reduce the risk of particle contamination.

3. SiC Coated Collector Bottom

1) Sediment collection area: Located at the bottom of the reaction chamber, its main function is to collect excess precursors and by-products to prevent them from recycling or forming contamination.

2) Structural support and thermal shielding function: The bottom structure needs to bear the weight of the equipment and thermal stress. The strength and thermal stability of SiC can ensure that it will not deform or peel off during long-term use.

The SiC coating at the top, center and bottom of the collector provides excellent thermal management capabilities, ensuring efficient heat dissipation and maintaining optimal process temperatures. It also has excellent chemical resistance, protecting components from corrosive environments and extending their service life. The properties of SiC coatings help to improve the stability of semiconductor manufacturing processes, reduce defects and improve film quality.

Specifications
Basic physical properties of CVD SiC coating
PropertyTypical Value
Crystal StructureFCC β phase polycrystalline, mainly (111) orientation
Density3.21 g/cm³
Hardness2500 Vickers hardness (500g load)
Grain SiZe2~10μm
Chemical Purity99.99995%
Heat Capacity640 J·kg-1·K-1
Sublimation Temperature2700℃
Flexural Strength415 MPa RT 4-point
Young' s Modulus430 Gpa 4pt bend, 1300℃
Thermal Conductivity300W·m-1·K-1
Thermal Expansion(CTE)4.5×10-6K-1


Basic physical properties of CVD SiC coating

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Applications

Overview of the semiconductor chip epitaxy industry chain:

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