Rapid Thermal Annealing Susceptor
The Rapid Thermal Annealing (RTA) Susceptor from Semixlab is a critical RTP component engineered to deliver stable and uniform thermal performance during high-temperature, short-duration semiconductor processes. Manufactured from ultra-high-purity graphite and protected by an inert silicon carbide (SiC) coating, the susceptor ensures excellent heat distribution, resistance to thermal shock, and reduced particle generation. It is designed to support advanced RTP applications such as dopant activation, silicide formation, and dielectric annealing. We welcome your inquiries.
Description
In advanced semiconductor processes, Rapid Thermal Processing (RTP) plays a critical role in achieving precise thermal control for dopant activation, silicide formation, and dielectric annealing. At the heart of every RTA system, the Rapid Thermal Annealing Susceptor serves as the key thermal interface between the heat source and silicon wafers, directly impacting temperature uniformity and process stability. Semixlab's RTA Susceptor is engineered for high-temperature, short-duration thermal cycling, ensuring consistent and repeatable heat transfer under the rapid heating and cooling conditions common in advanced Rapid Thermal Processing (RTP) techniques.
Semixlab's SiC-Coated Graphite Susceptor is manufactured from ultra-high-purity graphite, offering exceptional thermal conductivity and controlled thermal mass for rapid temperature response while minimizing thermal lag. The graphite substrate is coated with an inert silicon carbide (SiC) protective layer that enhances surface stability, suppresses particle generation, and significantly improves resistance to thermal shock, oxidation, and chemical corrosion.
In RTP processes, the RTA Susceptor plays a critical role in stabilizing the thermal field across the wafer surface. By efficiently absorbing radiant energy and uniformly re-emitting it, the susceptor minimizes temperature gradients both within and between wafers. This uniformity is essential for achieving precise control over thin-film resistivity during ion implantation activation, maintaining phase stability during metal silicide formation, and preventing uneven film stress during dielectric annealing.
Semixlab's Wafer Heating Susceptor is optimized for compatibility with mainstream RTP and RTA equipment platforms, supporting both 200 mm and 300 mm wafer sizes. Its SiC-coated surface exhibits low outgassing and excellent emissivity stability during repeated thermal cycles, helping maintain precise temperature calibration and reducing equipment downtime due to contamination or maintenance.
From a manufacturing perspective, Semixlab's Rapid Thermal Annealing Susceptor is a critical process component influencing electrical uniformity, defect rates, and overall equipment effectiveness (OEE). By integrating high-purity materials, proven coating technology, and process-oriented design, Semixlab delivers an advanced RTA substrate solution that ensures stable thermal performance, minimizes particle contamination risks, and achieves long-term process stability. More importantly, Semixlab is committed to providing cutting-edge technology and customized RTA susceptor solutions for semiconductor RTP processes. We sincerely look forward to becoming your long-term partner in China.
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