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CVD Silicon Carbide (SiC) Coating

CVD Silicon Carbide (SiC) Coating

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MOCVD SiC Coated Graphite Susceptor
MOCVD SiC Coated Graphite Susceptor

MOCVD SiC Coated Graphite Susceptor


Place of Origin:China
Brand Name:Semixlab
Model Number:MSCGS-01
Certification:ISO9001
Minimum Order Quantity:1 set
Price:Contact for Customized Quotation
Packaging Details:Standard export package
Delivery Time:35-40 Days After Order Confirmation
Payment Terms:T/T
Supply Ability:1000 sets/Month
Description

1. Life extended by 300%+

The buffer layer technology enables the number of thermal shock cycles to be greater than 5,000 times (less than 1,500 times for conventional products).

The continuous operating temperature can reach 1650°C, and the coating shows no cracks or peeling.

2. Zero pollution guarantee

The purity of SiC coating is 6N grade (total amount of metal impurities < 0.5ppm).

Passed the SEMI standard particle release test (Class 10 cleanliness).

3. Thermal field uniformity upgrade

The temperature difference on the base surface is less than ±2°C (measured data for Φ300mm specification).

Supports rapid heating (20°C/s) without thermal deformation.

4. Excellent corrosion resistance

Resistant to corrosion by gases such as H2, NH3, and TMAl, with a service life of over 18 months.

The change rate of surface roughness is less than 5% (tested after 100 process cycles).

5. Compatible with mainstream models worldwide

Supports customization in diameters ranging from 50 to 500mm.

6. Full Life cycle cost optimization

The maintenance cycle has been extended to three times that of regular products.

The yield rate of epitaxial wafers has increased by 2-3%.



Company Strength

Semixlab Technology Co.,Ltd has 2 R&D centers, 2 production bases, 12 production lines, 150+ employees, and R&D investment accounts for more than 30%. Our product layout is mainly used in LED, IC integrated circuit, third generation semiconductor, photovoltaic and other industries. Semixlab has strong R&D, production and integrated testing and verification capabilities. At the same time, we are constantly improving our technology and equipment with the investment of tens of millions per year.

Specifications

Key performance parameters

Project parameters

The base material is SGL isostatic pressed graphite

Coating thickness: 80-200μm (customizable)

The purity of the coating is ≥99.9999%

Density: 1.85-1.90 g/cm³

Thermal conductivity: 125 W/m·K (RT)

Flexural strength ≥45 MPa

Operating temperature ≤1800°C (inert atmosphere)

Quality assurance system

Full-process traceability: Full data recording from graphite substrate to coating process.

Precision detection: SEM/EDS coating analysis, helium mass spectrometry leak detection, high-temperature thermal shock testing.

Basic physical properties of CVD SiC coating
PropertyTypical Value
Crystal StructureFCC β phase polycrystalline, mainly (111) orientation
Density3.21 g/cm³
Hardness2500 Vickers hardness (500g load)
Grain SiZe2~10μm
Chemical Purity99.99995%
Heat Capacity640 J·kg-1·K-1
Sublimation Temperature2700℃
Flexural Strength415 MPa RT 4-point
Young' s Modulus430 Gpa 4pt bend, 1300℃
Thermal Conductivity300W·m-1·K-1
Thermal Expansion(CTE)4.5×10-6K-1

Basic physical properties of CVD SiC coating:

Applications

Application scenarios or equipment: Aixtron Epi equipment

Core application scenarios

● LED chip manufacturing: GaN blue/white LED epitaxial growth.

● Power semiconductors: SiC/GaN power devices (MOSFET, HEMT).

● 5G radio frequency devices: high frequency microwave radio frequency chip substrate.

● Laser diode: VCSEL, edge-emitting laser epitaxial process.

● Advanced packaging: Deposition of high-precision semiconductor thin films.

Overview of the semiconductor chip epitaxy industry chain:

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