CVD SiC Coated Graphite Susceptor for MOCVD Epitaxy
At Semixlab, we specialize in manufacturing CVD SiC coated graphite susceptors tailored for demanding MOCVD epitaxy processes. As a critical component inside the reactor, the susceptor directly impacts temperature uniformity, film quality, and overall process stability during epitaxial growth. Our products combine high-purity isostatic graphite substrates with a dense, uniform chemical vapor deposited (CVD) silicon carbide (SiC) coating, delivering excellent resistance to corrosion, particle generation, and thermal degradation under extreme process conditions. We look forward to your further inquiry.
Description
Semixlab CVD SiC coated graphite susceptor is built for one purpose — to keep epitaxy stable when everything else is pushed to the limit. In modern MOCVD production, where temperatures exceed 2000°C and process windows are increasingly narrow, even minor surface instability can translate into wafer-level defects. This is where a truly dense and uniform SiC coating becomes critical.
By combining high-density graphite with a tightly controlled chemical vapor deposition process, Semixlab delivers a coating that behaves consistently across long production cycles, helping customers maintain yield rather than constantly recalibrating it.
Where It Actually Matters?
In real production environments, susceptors are not judged by how they look — but by how long they remain stable. During GaN or SiC epitaxy, exposure to NH₃, H₂ and high thermal gradients continuously attacks the coating surface. Lower-grade coatings start to show micro-cracks, particle shedding, or even delamination.
Semixlab’s SiC coating is engineered to resist exactly these failure modes. The dense microstructure minimizes gas penetration, while the strong adhesion between coating and graphite substrate prevents peeling under repeated thermal cycling. This is why many customers switch not for performance on day one — but for consistency after hundreds of cycles.
Material Behavior Under Extreme Conditions

A reliable SiC coating isn’t defined by a single number — it’s about how the material holds up when everything in the process is pushing its limits.
At temperatures above 2200°C, the coating still needs to stay intact, without deformation or degradation. At the same time, surface condition matters more than it looks on paper. If the surface is too rough, gas flow can become unstable; if it’s too smooth but internally porous, the coating may not last through repeated cycles.
Semixlab focuses on keeping this balance. The coating is dense enough to block gas penetration, while the impurity level is kept extremely low to avoid introducing unwanted variables during epitaxy. In practice, what this means is simple — the surface remains stable, and the process stays consistent from one run to the next.
Built Around Real Equipment

This product is widely used across mainstream epitaxy platforms, including planetary and vertical reactor configurations.
Rather than offering a generic component, Semixlab works based on actual process conditions — including temperature profile, gas flow design, and wafer size — to ensure compatibility from the start.
What Customers Gain Over Time?

Over time, the difference becomes visible not in specifications, but in operations.
Customers typically report more stable epitaxial thickness distribution, fewer particles, and longer maintenance intervals. Instead of frequent replacement or process tuning, production becomes more predictable — which ultimately reduces total cost of ownership.
This is especially critical in high-volume applications such as power devices and micro-LED production, where consistency directly impacts profitability.
Customization Approach

Each reactor behaves differently, and so should the susceptor.
Semixlab provides customized solutions based on reactor type, wafer size, and process requirements. From coating thickness optimization to geometry adjustment, every detail is tuned to match real production conditions — not just drawings.
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