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CVD SiC Wafer Holder
Semixlab’s SiC wafer holders are made from high-density isostatic graphite, then coated with a high-purity CVD silicon carbide layer. They’re built for the tough conditions inside MOCVD and epitaxy reactors. The result: good thermal uniformity across the wafer, and very low metallic contamination – which directly helps your yield and device performance.
Description
In compound semiconductor epitaxy – like GaN-on-Si, GaN-on-sapphire, or MicroLED fabrication – the wafer holder (sometimes called a SiC-coated susceptor) is a critical part. It sits between the heater and the wafer and manages most of the thermal transfer.
Why engineers choose Semixlab SiC wafer holders?
● 7-nines purity (total metals < 5 ppm) – We use a proprietary CVD process (developed by Prof. Shaolong He) that keeps trace metals like Fe, Cu, and Ni very low. That means fewer lattice defects during sensitive GaN growth.
● Good thermal uniformity (±1 %) – The CVD SiC film has high thermal conductivity (~300 W/m·K). Heat spreads quickly and evenly, which helps reduce wafer bow and thermal stress.
● Strong resistance to H₂ and NH₃ corrosion – Unlike bare graphite or quartz, our dense SiC coating stays inert under high-temperature ammonia and hydrogen flows (900–1200 °C). Less particle shedding, and the part lasts 3–5 times longer.
● CTE matching – A special gradient transition layer keeps the coefficient of thermal expansion between the coating and graphite well matched. No delamination or cracking, even during fast ramp-up and ramp-down.
Specifications
| Parameter | Typical Value | Why It Matters |
| Coating material | 99.99999% CVD SiC | No ion leakage or heavy metal contamination |
| Substrate | High-density isostatic graphite | Holds strength at 1600 °C |
| Thermal conductivity | ~300 W/m·K (at RT) | Even EPI layer thickness |
| Coating hardness | ~2500 HV (Vickers) | Resists wear from automated loading/unloading |
| Surface roughness | Ra < 0.2 μm | Less adhesion of polymers and by-products |
| Compatibility | customization | Precision matched to your customization requirements |
Applications
Key application scenarios
● GaN-on-Si / GaN-on-sapphire epitaxy – Important for power devices and RF chips, where local thermal stability directly affects the electrical mobility of the GaN layer.
● MicroLED and advanced displays – Needs ultra-high purity and very few particles, which our holder provides for high-density LED arrays.
● SiC crystal growth (PVT) – Works as a high-performance carrier for SiC source material, and can support growth rates up to ~1.46 mm/h.
● Rapid thermal processing (RTP) – The holder can handle extreme thermal shock during fast annealing cycles without micro-cracking.
Competitive Advantage
Semixlab advantages
We’re not just a supplier – we try to be a real partner for your thermal field needs. Semixlab was founded by researchers from the Chinese Academy of Sciences, and we run more than 12 dedicated CVD production lines. We also have in-house 5-axis CNC machining, so we can make wafer holders with tolerances as tight as ±0.01 mm. That means they drop right into your global tool sets without extra fitting.
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