CVD SiC coating wafer susceptor

Semixlab focuses on the development and production of high-purity silicon carbide (SiC) coatings, and is committed to providing high-performance solutions for the semiconductor industry. Through advanced chemical vapor deposition (CVD) technology, we provide custom coating services for wafer susceptors to ensure their superior performance in extreme process environments.

We form high-purity β-SiC coating (crystal orientation (111)) on the surface of high-purity graphite substrate through CVD technology, at the same time, it has ultra-high temperature resistance, corrosion resistance and uniform heat distribution ability. Products suitable for Aixtron, Veeco and other mainstream epitaxial growth equipment, widely used in GaN/GaAs and other epitaxial growth.

The substrate of CVD SiC coating wafer is made of high purity SGL graphite, and a dense silicon carbide coating is uniformly grown on its surface by chemical vapor deposition (CVD) process. This process is done in a high-temperature reaction chamber and ensures nanoscale crystalline integrity of the coating by precisely controlling the ratio of silicon source (e.g., methyltrichlorosilane) to carbon source gas, temperature gradient (typically between 1000°C and 1400℃) and deposition rate. The thickness of the coating can be customized according to the application requirements, ranging from a few microns to tens of microns, to meet the mechanical strength requirements at extreme temperatures, while avoiding the risk of stress cracking due to excessive thickness.

In LED epitaxial growth, the wafer tray needs to withstand instantaneous high temperatures above 1600℃ and rapid thermal cycling. With its inherent high melting point (approximately 2700℃), low coefficient of thermal expansion (4.5×10^-6/K) and excellent thermal conductivity (~120 W/m·K), CVD SiC coating can maintain geometric stability under severe temperature fluctuations and avoid wafer warping or micro-cracks caused by thermal stress. In addition, the chemical inertness of SiC makes it show strong corrosion resistance in corrosive gases (such as HCl, H₂) environment, significantly reducing the impurity pollution introduced by volatilization or side reactions during the process, thereby improving the uniformity of the epitaxial layer on the wafer surface and the device yield.

The product is widely used in the third generation semiconductor manufacturing, high-power LED chip production. For example, in the metal-organic chemical vapor deposition (MOCVD) process for GaN-on-SiC RF devices, the CVD SiC tray achieves temperature uniformity within ±1℃ of the wafer surface through precise thermal field distribution design, ensuring that the epitaxial layer thickness deviation is less than 1%. At the same time, its low particle release characteristics (particle density <0.1/cm²as measured by SEM-EDS) make it excellent in ultra-clean room environments, especially suitable for advanced process nodes sensitive to defects (such as assisted processes for logic chips below 5 nm).

Compared with traditional wafer trays, the service life of CVD SiC coating wafer hy pnotic tor can be extended by 3-5 times. Its surface self-cleaning features reduce maintenance frequency and, combined with repairable local coating redeposition technology, reduce the return on investment cycle by more than 40%. According to industry measurement data, the 6-inch SiC epitaxial production line using this product can reduce process fluctuations between batches by 15%, increase annual production capacity by 20%, and reduce the scrap rate due to pollution to less than 0.03%.

From laboratory research and development to large-scale production, Semixlab's CVD SiC coating wafer hy pnotic tor has always been targeted at the industry leader. It is not only a process consumable, but also a technological cornerstone in the field of high temperature precision manufacturing. It will continue to provide reliable guarantee for high-end device manufacturing in cutting-edge fields such as 5G communication, new energy power electronics, and quantum computing.

Wafer Support and Heat transfer in MOCVD processes, including blue and green LED, UV LED and deep-UV LED etc.,which is adapted to equipment from LPE, Aixtron, Veeco, Nuflare, TEL, ASM, Annealsys, TSI and so on.

Leading technology: CVD process to achieve (111) orientation β-SiC, grain size 2-10μm, dense structure.

Extreme environment adaptation: high temperature oxidation resistance, plasma erosion resistance, ash < 5ppm.

Excellent thermal management: Thermal conductivity of 300W/m·K, CTE perfectly matches graphite to avoid thermal stress cracking.

Full process service: Support substrate processing, coating deposition, testing one-stop delivery.