CVD SiC coating Half-moon graphite parts

Semixlab provides the market with excellent CVD SiC coating Half-moon graphite parts as the core support component of the reaction chamber. Through the double innovative design of materials and structures, it provides a process environment with high temperature, high chemical inertia and low pollution risk for SiC epitaxial growth. It has become a key consumable to break through the bottleneck of mass production of large-size and low-defect epitaxial sheets.

In the core of semiconductor chip manufacturing, the stability of epitaxial growth process directly determines the performance and yield of the device. CVD SiC coating Half-moon graphite parts, as the core consumables for carrying wafers in epitaxial equipment, through the breakthrough of material composite and precision processing technology, Solves the problem of rapid loss and contamination of conventional graphite assemblies in high temperature (1200-1800℃) and highly corrosive gases such as SiH₄/C3H₈/H₂. The component is made of a high-purity isostatic pressed SGL graphite substrate with a 50μm dense silicon carbide coating on the surface by chemical vapor deposition (CVD) process, which combines the high thermal conductivity of graphite with the extreme temperature resistance of silicon carbide. Its unique half-moon geometry (180°±5° arc, outer diameter for 4/6/8 inch equipment) improves the thickness uniformity of the epitaxial layer to within ±1.5% by optimizing the flow path and thermal field distribution, while blocking the diffusion of metal impurities (Fe and Al content <0.1ppm) in the graphite substrate to the wafer. The defect density of the epitaxial layer is reduced to less than 0.05cm^-2.

Sizes:

6 inch, 8 inch, 12 inch.

SiC epitaxial layer growth graphite susceptor.

Gas inlet diversion and thermal field control in SiC epitaxial growth furnace.

At present, the technology has been applied in the large silicon wafer epitaxy production line of the leading semiconductor manufacturers in China, promoting the average yield of SiC MOSFET devices from 90% to 98%, and reducing the epitaxy cost of single furnace by 40%. In the future, with the acceleration of the 8-inch SiC wafer production process, the integrated innovation of the gradient composite coating (SiC/Si₃ N₄) and the intelligent thermal management module will promote the component to play a more core industry value in ultra-high voltage applications such as aerospace and new energy vehicle electric drive.

Advantage performance:

In the practical application of SiC epitaxial growth, the component shows far more performance advantages than traditional materials: silicon carbide coating thermal shock cycle capacity of more than 1000 times (room temperature to 1800℃ sudden change), continuous service life of more than 2000 hours (compared to uncoated graphite 5 times). In addition, the thermal expansion coefficient (4.5×10^-6/K) is highly matched with the graphite substrate (4.8×10^-6/K), which effectively avoids coating cracking and particle shedding caused by high temperature stress, and ensures zero pollution risk in the epitaxial growth furnace.

Precision structure design: half-moon guide structure optimizes gas distribution, reduces turbulence and local overheating.

Extreme environment adaptation: β-SiC coating is resistant to high temperature oxidation and plasma erosion, and its life is extended by more than 3 times.

Thermal field uniformity: thermal conductivity 300W/m·K, CTE and graphite substrate match, avoid thermal stress cracking.

Full process service: support substrate processing, coating deposition, performance testing one-stop delivery.