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CVD Silicon Carbide (SiC) Coating

CVD Silicon Carbide (SiC) Coating

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CVD SiC Coating Ceiling
CVD SiC Coating Ceiling

CVD SiC Coating Ceiling


As a leading Chinese manufacturer of CVD SiC Coating Ceiling components, The CVD SiC Coating Ceiling from Semixlab is a high-performance chamber component designed for advanced semiconductor manufacturing environments, including epitaxy (EPI) and CVD deposition processes. Utilizing high-purity chemical vapor deposition silicon carbide coating technology, this ceiling component offers outstanding resistance to high temperatures, corrosive process chemistries, and plasma exposure while maintaining ultra-low particle and metal contamination levels. Engineered to support stable chamber conditions and long-term process repeatability, the CVD SiC Coating Ceiling plays a critical role in protecting epitaxial growth quality, deposition uniformity, and equipment uptime. We look forward to your inquiry.

Description

In semiconductor epitaxy (EPI) processes, particularly silicon epitaxy and silicon carbide epitaxy, ceiling components are continuously exposed to extreme thermal cycling, high-purity hydrogen environments, and chlorine-containing precursors. CVD SiC coatings offer exceptional chemical inertness and thermal stability, effectively isolating chamber structures from corrosive process gases while minimizing particle generation. Their dense, high-purity microstructure suppresses metal contamination and prevents coating degradation during extended production runs, directly supporting uniform epitaxial layer growth, stable dopant incorporation, and low defect density.

In CVD deposition processes such as LPCVD and PECVD, the chamber ceiling plays a critical role in maintaining a stable chamber environment during repeated deposition and cleaning cycles. If not, process byproducts and film deposition on chamber surfaces can significantly impact device matching and operational repeatability. CVD SiC coatings exhibit low adhesion to deposited films and excellent tolerance to fluorine- and chlorine-based cleaning chemicals, enabling efficient in-situ cleaning and reducing delamination. Consequently, film thickness uniformity, process repeatability, and equipment uptime are significantly enhanced, particularly in high-volume production environments.

Semixlab's CVD SiC Coating Ceiling combines high coating density, controllable surface roughness, and strong adhesion to the substrate. Thermal expansion compatibility between the SiC coating and graphite substrate ensures mechanical integrity under rapid thermal cycling, minimizing the risk of cracking or delamination.

Compared to traditional quartz or oxide materials, CVD SiC exhibits superior tolerance to plasma etching and hydrogen etching, directly extending preventive maintenance intervals and reducing total cost of ownership. This CVD SiC Coating Ceiling is engineered for compatibility with mainstream semiconductor process equipment, ensuring consistency between chambers and across devices—critical for advanced process nodes and multi-device production lines.

As a leading technology company in China's semiconductor epitaxial process, Semeixab is committed to providing the semiconductor industry with advanced technologies and customized CVD SiC Coating Ceiling product solutions. We can match the corresponding functions and models of our products to your specific product needs, ensuring the smooth operation of your company's production. Semeixab sincerely looks forward to becoming your long-term partner in China.

Specifications
Basic physical properties of CVD SiC coating
PropertyTypical Value
Crystal StructureFCC β phase polycrystalline, mainly (111) oriented
Density3.21 g/cm³
Hardness2500 Vickers hardness(500g load)
Grain Size2~10μm
Chemical Purity99.99995%
Heat Capacity640 J·kg-1·K-1
Sublimation Temperature2700℃
Flexural Strength415 MPa RT 4-point
Young' s Modulus430 Gpa 4pt bend, 1300℃
Thermal Conductivity300W·m-1·K-1
Thermal Expansion(CTE)4.5×10-6K-1
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