CVD SiC-Coated Wafer Carrier

In practice, Semixlab’s CVD SiC coated wafer carrier serves as a stable, contamination-conscious platform for wafers during epitaxial growth, CVD, PVD, and similar processes. It helps maintain a uniform temperature profile across the wafer, reduces the risk of particulate contamination, and extends the usable life of the part even in aggressive reactor environments.

At a Glance

Product name: CVD SiC-coated wafer carrier

Also referred to as: SiC-coated graphite wafer carrier, epitaxy carrier, graphite wafer holder, SiC-coated susceptor, semiconductor wafer carrier

Base material: High-purity isostatic graphite with CVD SiC coating

Operating temperature range: 1000 °C – 1600 °C

Primary applications: SiC epitaxy, GaN MOCVD, silicon epitaxy, CVD/PVD processes, general semiconductor equipment

Key Characteristics

● CVD SiC coating – The coating is deposited as a dense, ultra-pure layer that effectively seals the graphite substrate. It resists chemical attack and minimises particle shedding during thermal cycling.

● High-temperature stability – The carrier holds its dimensional integrity and mechanical properties at temperatures above 1400 °C, which is critical for consistent epitaxial runs.

● Surface purity – With impurity levels in the parts-per-billion range, the SiC surface reduces the risk of unintended doping or contamination, directly supporting higher wafer yields.

● Chemical and wear resistance – The coating stands up well against hydrogen, ammonia, chlorides, and other aggressive species commonly encountered in reactor chambers.

● Thermal uniformity – The graphite core provides high thermal conductivity, while the SiC layer ensures even heat distribution, helping to achieve uniform film thickness and doping profiles.

● Extended service life – Compared with bare graphite alternatives, the coated carrier lasts significantly longer, which translates into fewer replacements and lower long-term consumable costs.

Why It Stands Out

● Semiconductor-grade raw materials

● Dense, pinhole-free CVD SiC coating with uniform thickness

● High thermal conductivity for rapid heat transfer

● Excellent resistance to corrosive gases

● Low particle generation – contributes to cleaner processes

● Good thermal shock resistance

● Long operational lifetime

● Compatible with a wide range of reactor models

● Custom dimensions available on request

About Semixlab

We specialise in advanced coating solutions and precision graphite components for the semiconductor, power electronics, and crystal-growth industries. Our strengths include:

● In-house CVD SiC coating expertise

● Precision machining and finishing of graphite

● Quality control aligned with semiconductor industry standards

● Custom engineering support – from prototyping to volume production

● Deep application knowledge in epitaxial processes

● Reliable global supply chain

Whether you are developing a new process or scaling up existing production, we offer wafer carrier solutions tailored to improve process stability, reduce defect density, and maximise the utilisation of your equipment.

Typical Applications

SiC epitaxy – The carrier is a natural fit for silicon carbide growth systems, where both temperature stability and contamination control are non-negotiable.

GaN MOCVD – For LED and power-device production, it delivers stable thermal performance and reliable operation in ammonia-rich, hydrogen-based atmospheres.

Silicon epitaxy – Also suitable for conventional silicon deposition processes that demand precise temperature management and high cleanliness.

CVD/PVD equipment – It provides secure wafer positioning and consistent thermal contact across multiple deposition cycles.