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SiC Coated Half Moon Components
LPE Half Moon Components are precision-engineered reactor components designed for high-temperature semiconductor epitaxy environments. Manufactured from high-purity isostatic graphite and protected by a dense SiC coating, these components play a critical role in optimizing thermal field distribution, stabilizing gas flow dynamics, and minimizing particle contamination inside LPE, CVD, and MOCVD epitaxy systems. Their half-moon geometry is specifically developed to improve process uniformity, reduce edge effects, and enhance epitaxial layer quality for demanding applications involving Si, SiC, and GaN materials. We look forward to your further inquiry.
Description
These SiC coated half moon parts are basically precision graphite components used in high-temperature SiC epitaxy. Once installed inside the reactor’s hot zone, they help keep the chamber stable, maintain thermal balance, and support consistent gas flow over long production runs.
They’re made from high-purity graphite with a dense CVD SiC coating on top. If you’re running a reactor platform that’s compatible with LPE S.p.A.-type epitaxy systems, these parts can serve as direct replacements or be customized as needed.
Key Features
-High-purity isostatic graphite substrate
-Dense CVD SiC protective coating
-Good resistance to thermal shock
-Low particle generation in operation
-Coating stays on well
-Works fine for long-cycle epitaxy
What we supply?
We make several reactor parts that fit LPE-style chamber structures:
-Half moon components
-Protection covers
-Flow guide parts
-Wafer support parts
-Shielding rings
-Custom graphite assemblies
Manufacturing
Each part is first precision-machined from selected graphite grades, then coated with CVD SiC, and finally checked for dimensions. We control coating thickness, surface condition, and critical dimensions to ensure consistent performance in semiconductor production environments.
Custom Service
We can help with:
-OEM replacement manufacturing
-Customization based on your drawings
-Reverse engineering from samples
-Batch production support
Specifications
Typical Technical Parameters
| Parameter | Typical Value |
| Base Material | High-purity isostatic graphite |
| Coating | CVD SiC |
| Coating Purity | > 99.99999% |
| Density (Graphite) | 1.75 – 1.90 g/cm³ |
| Operating Temperature | up to 2000°C+ |
| Coating Thickness | 50 – 200 μm (adjustable) |
| Surface Roughness (Ra) | Controlled per application |
| Adhesion Strength | No delamination under thermal cycling |
| Chemical Resistance | Stable in H₂, Si-containing gases |
Applications
These parts are widely used in:
-SiC epitaxy reactors
-Semiconductor CVD equipment
-High-temperature crystal growth systems
They’re especially suitable for reactor platforms compatible with LPE S.p.A. epitaxy equipment.
Our Services
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