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Carbon-Carbon Composite Materials
Semixlab’s Carbon-Carbon Composite Materials are engineered for the demanding thermal conditions of SiC and GaN semiconductor manufacturing, offering exceptional high-temperature strength, superior dimensional stability, and ultra-low impurity performance. Designed for use in epitaxy reactors and SiC activation annealing systems, these C/C components provide reliable mechanical support, stable thermal uniformity, and long operational lifetimes under extreme temperatures exceeding 1500–2000 °C. Their low outgassing characteristics and excellent resistance to thermal shock make them ideal for heater structures, wafer carriers, insulation assemblies, and load-support frames within MOCVD, CVD, and high-energy annealing tools. We welcome your inquiries.
Description
Semixlab’s Carbon-Carbon Composite (C/C) Materials are engineered for the extreme thermal demands of next-generation semiconductor manufacturing, providing exceptional mechanical stability, long-term dimensional accuracy, and unrivaled thermal endurance in high-temperature, high-purity environments.
In SiC and GaN epitaxial growth reactors, C/C composites serve as critical load-bearing and thermal-management structures in heater plates, carrier frames, support fixtures, and insulation assemblies. Their unique microstructure offers high specific strength, extremely low thermal deformation, and superior fatigue resistance under repeated 1500–1800 °C thermal cycles, ensuring stable wafer positioning and consistent thermal fields throughout long epitaxy runs.
When processed with proprietary purification and densification technologies, Semixlab’s C/C materials achieve ultra-low impurity levels suitable for SiC and GaN MOCVD, CVD, and PVT environments, minimizing contamination risks and supporting uniform crystal growth at the wafer and boule level. The high thermal shock resistance of C/C also eliminates micro-fracture failure modes common in ceramics or standard graphite when subjected to rapid ramp-up and cooling cycles inherent to epitaxial processing.
In SiC activation annealing—often executed at temperatures exceeding 1700 °C—Carbon-Carbon Composite Materials function as robust structural elements, heater assemblies, and thermal insulation layers within high-energy anneal chambers. Their ability to maintain mechanical strength above 2000 °C, combined with low outgassing and chemical inertness, ensures a clean and controlled thermal environment essential for dopant activation in advanced SiC MOSFETs, diodes, and power modules.
Unlike conventional graphite, C/C materials preserve dimensional integrity over extended high-temperature lifetimes, enabling precise and repeatable dopant activation profiles, reducing drift in annealing uniformity, and improving overall device electrical performance and yield.
Semixlab’s engineering approach integrates application-specific fiber architectures, tailored matrix densities, and optional high-purity SiC or pyrolytic carbon surface coatings, allowing C/C components to meet the stringent requirements of both epitaxy and annealing equipment. These technological advancements result in longer part lifetimes, reduced maintenance cycles, and significantly improved thermal uniformity.
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