Carbon Carbon Composite Crucible

In silicon crystal growth (Czochralski process), the C/C crucible is used primarily as a structural support and thermal stabilization element surrounding the fused-silica inner crucible. Its low thermal expansion, high mechanical strength, and excellent thermal shock resistance help maintain crucible geometry during long pull cycles, reducing quartz deformation and enabling more uniform temperature gradients. This contributes directly to improved dislocation control, longer usable quartz crucible life, and enhanced uniformity in the resulting monocrystalline silicon ingot.

Within silicon and SiC epitaxy systems, the Carbon Carbon Composite Crucible serves as a stable high-temperature carrier and thermal management component, supporting susceptors and wafer holding structures. The composite’s ability to retain rigidity and chemical inertness in hydrogen, chlorinated, or high-vacuum environments is essential for minimizing contamination and achieving predictable thermal performance. The result is more consistent epitaxial layer thickness, higher device-grade surface quality, and improved reactor uptime.

For SiC monocrystal growth using Physical Vapor Transport (PVT), the C/C crucible becomes a core component of the sublimation chamber. The extraordinary high-temperature capability of carbon-carbon composites—exceeding 2200°C in inert atmospheres—allows the crucible to withstand prolonged sublimation cycles while maintaining a stable thermal field critical for defect reduction in SiC boules. Its low impurity content and minimal particle generation reduce the risk of unintentional doping and micropipe propagation, supporting the production of high-quality 4H and 6H SiC crystals used in advanced power electronics.

Designed for next-generation semiconductor materials, the Semixlab C/C crucible enables higher productivity, longer tool lifetime, and superior crystal quality across multiple manufacturing platforms. Semixlab’s Carbon Carbon Composite Crucible is manufactured with strict process control, including high-purity precursor selection, multi-step densification, and proprietary surface treatments. The result is a crucible with excellent dimensional stability, enhanced oxidation resistance, and significantly reduced particulate release compared with standard graphite alternatives. Each product undergoes precision inspection and thermal-mechanical validation to ensure consistent performance in industrial CZ pullers, vertical/horizontal epitaxy reactors, and SiC PVT furnaces.